Substrate RF losses and non-linearities in GaN-on-Si HEMT technology

S. Yadav; P. Cardinael; M. Zhao; K. Vondkar; A. Khaled; R. Rodriguez; B. Vermeersch; S. Makovejev; E. Ekoga; A. Pottrain; N. Waldron; J. P. Raskin; B. Parvais; N. Collaert

doi:10.1109/IEDM13553.2020.9371893

Substrate RF losses and non-linearities in GaN-on-Si HEMT technology

S. Yadav
, P. Cardinael
, M. Zhao
, K. Vondkar
, A. Khaled
, R. Rodriguez
, B. Vermeersch
, S. Makovejev
, E. Ekoga
, A. Pottrain
, N. Waldron
, J. P. Raskin
, B. Parvais
, N. Collaert

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

The analysis and mitigation of substrate-related RF losses and non-linearities is crucial to enable GaN HEMTs on silicon for front-end transceivers for 5G and beyond. Here, for the first time, the impact of material growth and HEMT fabrication process on the substrate RF losses and linearity is studied using the effective substrate resistivity, ρeff, and 2nd harmonic power, H2, figures-of-merit. It is shown that CPWs on fully-processed, GaN-on-high resistivity (3-6 kΩ•cm), 200 mm CZ-Si wafers can achieve H2 levels ~ -85 dBm (at Pout ~15 dBm) with ρeff ~1 kΩ•cm.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	8.2.1-8.2.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371893
Publication status	Published - 12 Dec 2020
Externally published	Yes
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 12 Dec 2020 → 18 Dec 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 18/12/20

Access to Document

10.1109/IEDM13553.2020.9371893

Cite this

Yadav, S., Cardinael, P., Zhao, M., Vondkar, K., Khaled, A., Rodriguez, R., Vermeersch, B., Makovejev, S., Ekoga, E., Pottrain, A., Waldron, N., Raskin, J. P., Parvais, B., & Collaert, N. (2020). Substrate RF losses and non-linearities in GaN-on-Si HEMT technology. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 8.2.1-8.2.4). Article 9371893 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371893

@inproceedings{b24fce79e5164dd587aa60e28120a023,

title = "Substrate RF losses and non-linearities in GaN-on-Si HEMT technology",

abstract = "The analysis and mitigation of substrate-related RF losses and non-linearities is crucial to enable GaN HEMTs on silicon for front-end transceivers for 5G and beyond. Here, for the first time, the impact of material growth and HEMT fabrication process on the substrate RF losses and linearity is studied using the effective substrate resistivity, ρeff, and 2nd harmonic power, H2, figures-of-merit. It is shown that CPWs on fully-processed, GaN-on-high resistivity (3-6 kΩ•cm), 200 mm CZ-Si wafers can achieve H2 levels \textasciitilde{} -85 dBm (at Pout \textasciitilde{}15 dBm) with ρeff \textasciitilde{}1 kΩ•cm.",

author = "S. Yadav and P. Cardinael and M. Zhao and K. Vondkar and A. Khaled and R. Rodriguez and B. Vermeersch and S. Makovejev and E. Ekoga and A. Pottrain and N. Waldron and Raskin, \{J. P.\} and B. Parvais and N. Collaert",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9371893",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "8.2.1--8.2.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "United States",

}

Yadav, S, Cardinael, P, Zhao, M, Vondkar, K, Khaled, A, Rodriguez, R, Vermeersch, B, Makovejev, S, Ekoga, E, Pottrain, A, Waldron, N, Raskin, JP, Parvais, B & Collaert, N 2020, Substrate RF losses and non-linearities in GaN-on-Si HEMT technology. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371893, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 8.2.1-8.2.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371893

Substrate RF losses and non-linearities in GaN-on-Si HEMT technology. / Yadav, S.; Cardinael, P.; Zhao, M. et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 8.2.1-8.2.4 9371893 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Substrate RF losses and non-linearities in GaN-on-Si HEMT technology

AU - Yadav, S.

AU - Cardinael, P.

AU - Zhao, M.

AU - Vondkar, K.

AU - Khaled, A.

AU - Rodriguez, R.

AU - Vermeersch, B.

AU - Makovejev, S.

AU - Ekoga, E.

AU - Pottrain, A.

AU - Waldron, N.

AU - Raskin, J. P.

AU - Parvais, B.

AU - Collaert, N.

PY - 2020/12/12

Y1 - 2020/12/12

N2 - The analysis and mitigation of substrate-related RF losses and non-linearities is crucial to enable GaN HEMTs on silicon for front-end transceivers for 5G and beyond. Here, for the first time, the impact of material growth and HEMT fabrication process on the substrate RF losses and linearity is studied using the effective substrate resistivity, ρeff, and 2nd harmonic power, H2, figures-of-merit. It is shown that CPWs on fully-processed, GaN-on-high resistivity (3-6 kΩ•cm), 200 mm CZ-Si wafers can achieve H2 levels ~ -85 dBm (at Pout ~15 dBm) with ρeff ~1 kΩ•cm.

AB - The analysis and mitigation of substrate-related RF losses and non-linearities is crucial to enable GaN HEMTs on silicon for front-end transceivers for 5G and beyond. Here, for the first time, the impact of material growth and HEMT fabrication process on the substrate RF losses and linearity is studied using the effective substrate resistivity, ρeff, and 2nd harmonic power, H2, figures-of-merit. It is shown that CPWs on fully-processed, GaN-on-high resistivity (3-6 kΩ•cm), 200 mm CZ-Si wafers can achieve H2 levels ~ -85 dBm (at Pout ~15 dBm) with ρeff ~1 kΩ•cm.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 8.2.1-8.2.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Yadav S, Cardinael P, Zhao M, Vondkar K, Khaled A, Rodriguez R et al. Substrate RF losses and non-linearities in GaN-on-Si HEMT technology. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 8.2.1-8.2.4. 9371893. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371893

Substrate RF losses and non-linearities in GaN-on-Si HEMT technology

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