@inbook{444ae6e110b2484383c4bd9b52e00e16,
title = "Suitability of high-k gate oxides for III-V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3",
abstract = "We present a comprehensive study of Positive Bias Temperature Instability (PBTI) in In0.53Ga0.47As devices with Al2O 3 gate oxide, and with varying thickness of the channel quantum well. We show significant instability of the device electrical parameters induced by electron trapping into a wide distribution of defects in the high-k layer, with energy levels just above the InGaAs conduction band. A significant PBTI dependence on the channel thickness is found and ascribed to quantization effects. We argue that, in order to be relevant for production, the superior transport properties of III-V channels will need to be demonstrated with more stable high-k gate stacks.",
keywords = "Bias Temperature Instability, III-V, InGaAs, Quantum Well, Reliability",
author = "J. Franco and A. Alian and B. Kaczer and D. Lin and T. Ivanov and A. Pourghaderi and K. Martens and Y. Mols and D. Zhou and N. Waldron and S. Sioncke and T. Kauerauf and N. Collaert and A. Thean and M. Heyns and G. Groeseneken",
year = "2014",
doi = "10.1109/IRPS.2014.6861098",
language = "English",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6A.2.1--6A.2.6",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
address = "United States",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}