Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

Ki Yeol Byun; Isabelle Ferain; John Hayes; Ran Yu; Farzan Gity; Cindy Colinge

doi:10.1016/j.mee.2010.09.005

Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

Ki Yeol Byun
, Isabelle Ferain
, John Hayes
, Ran Yu
, Farzan Gity
, Cindy Colinge

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.

Original language	English
Pages (from-to)	522-525
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	4
DOIs	https://doi.org/10.1016/j.mee.2010.09.005
Publication status	Published - Apr 2011

Keywords

Avalanche photodiodes
Ge to Si wafer bonding
Surface activation

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10.1016/j.mee.2010.09.005

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title = "Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration",

abstract = "In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.",

keywords = "Avalanche photodiodes, Ge to Si wafer bonding, Surface activation",

author = "Byun, \{Ki Yeol\} and Isabelle Ferain and John Hayes and Ran Yu and Farzan Gity and Cindy Colinge",

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T1 - Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

AU - Byun, Ki Yeol

AU - Ferain, Isabelle

AU - Hayes, John

AU - Yu, Ran

AU - Gity, Farzan

AU - Colinge, Cindy

PY - 2011/4

Y1 - 2011/4

N2 - In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.

AB - In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.

KW - Avalanche photodiodes

KW - Ge to Si wafer bonding

KW - Surface activation

UR - https://www.scopus.com/pages/publications/79751527215

U2 - 10.1016/j.mee.2010.09.005

DO - 10.1016/j.mee.2010.09.005

M3 - Article

AN - SCOPUS:79751527215

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SP - 522

EP - 525

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

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Keywords

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