Surface emitting 1.5 μm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

Giriprasanth Omanakuttan; Yan Ting Sun; Carl Reuterskiöld Hedlund; Carl Junesand; Richard Schatz; Sebastian Lourdudoss; Valerie Pillard; François Lelarge; Jack Browne; John Justice; Brian Corbett

doi:10.1364/OME.395249

Surface emitting 1.5 μm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

Giriprasanth Omanakuttan
, Yan Ting Sun
, Carl Reuterskiöld Hedlund
, Carl Junesand
, Richard Schatz
, Sebastian Lourdudoss
, Valerie Pillard
, François Lelarge
, Jack Browne
, John Justice
, Brian Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate a surface emitting 1.5 μm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 μm and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 μm MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 μm surface emitting laser structures on silicon with further optimization.

Original language	English
Pages (from-to)	1714-1723
Number of pages	10
Journal	Optical Materials Express
Volume	10
Issue number	7
DOIs	https://doi.org/10.1364/OME.395249
Publication status	Published - 1 Jul 2020

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title = "Surface emitting 1.5 μm multi-quantum well LED on epitaxial lateral overgrowth InP/Si",

abstract = "We demonstrate a surface emitting 1.5 μm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 μm and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 μm MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 μm surface emitting laser structures on silicon with further optimization.",

author = "Giriprasanth Omanakuttan and Sun, \{Yan Ting\} and Hedlund, \{Carl Reuterski{\"o}ld\} and Carl Junesand and Richard Schatz and Sebastian Lourdudoss and Valerie Pillard and Fran{\c c}ois Lelarge and Jack Browne and John Justice and Brian Corbett",

note = "Publisher Copyright: {\textcopyright} 2020 OSA - The Optical Society.",

year = "2020",

month = jul,

day = "1",

doi = "10.1364/OME.395249",

language = "English",

volume = "10",

pages = "1714--1723",

journal = "Optical Materials Express",

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TY - JOUR

T1 - Surface emitting 1.5 μm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

AU - Omanakuttan, Giriprasanth

AU - Sun, Yan Ting

AU - Hedlund, Carl Reuterskiöld

AU - Junesand, Carl

AU - Schatz, Richard

AU - Lourdudoss, Sebastian

AU - Pillard, Valerie

AU - Lelarge, François

AU - Browne, Jack

AU - Justice, John

AU - Corbett, Brian

PY - 2020/7/1

Y1 - 2020/7/1

N2 - We demonstrate a surface emitting 1.5 μm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 μm and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 μm MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 μm surface emitting laser structures on silicon with further optimization.

AB - We demonstrate a surface emitting 1.5 μm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 μm and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 μm MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 μm surface emitting laser structures on silicon with further optimization.

UR - https://www.scopus.com/pages/publications/85087655896

U2 - 10.1364/OME.395249

DO - 10.1364/OME.395249

M3 - Article

AN - SCOPUS:85087655896

SN - 2159-3930

VL - 10

SP - 1714

EP - 1723

JO - Optical Materials Express

JF - Optical Materials Express

IS - 7

ER -

Surface emitting 1.5 μm multi-quantum well LED on epitaxial lateral overgrowth InP/Si

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