Surface preparation effects for molecular beam epitaxial growth of ZnSe layers on InGaP layers

Shinji Saito; Yukie Nishikawa; Masaaki Onomura; Peter J. Parbrook; Masayuki Ishikawa; Genichi Hatakoshi

doi:10.1143/JJAP.33.L705

Surface preparation effects for molecular beam epitaxial growth of ZnSe layers on InGaP layers

Shinji Saito
, Yukie Nishikawa
, Masaaki Onomura
, Peter J. Parbrook
, Masayuki Ishikawa
, Genichi Hatakoshi

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of InGaP surface preparation has been investigated for the molecular beam epitaxial (MBE) growth of ZnSe. The net acceptor concentration profile near the interface of nitrogen-doped p-type ZnSe layers was strongly affected by the surface preparation of InGaP layers. The low net acceptor concentration region for the samples grown on a thermally treated (580 °C) or P₂S₅-treated InGaP surface was narrower than that region for the sample grown on a surface exposed to neither thermal treatment nor P₂S₅ treatment. Structures with InGaP buffer layers exposed to the surface treatments outlined here hold much promise for the reduction of the blue-green laser operation voltage.

Original language	English
Pages (from-to)	L705-L707
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	33
Issue number	5
DOIs	https://doi.org/10.1143/JJAP.33.L705
Publication status	Published - May 1994
Externally published	Yes

Keywords

InGaP
Molecular beam epitaxy
Net acceptor concentration
PS
Surface preparation
ZnSe

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10.1143/JJAP.33.L705

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title = "Surface preparation effects for molecular beam epitaxial growth of ZnSe layers on InGaP layers",

abstract = "The effect of InGaP surface preparation has been investigated for the molecular beam epitaxial (MBE) growth of ZnSe. The net acceptor concentration profile near the interface of nitrogen-doped p-type ZnSe layers was strongly affected by the surface preparation of InGaP layers. The low net acceptor concentration region for the samples grown on a thermally treated (580 °C) or P2S5-treated InGaP surface was narrower than that region for the sample grown on a surface exposed to neither thermal treatment nor P2S5 treatment. Structures with InGaP buffer layers exposed to the surface treatments outlined here hold much promise for the reduction of the blue-green laser operation voltage.",

keywords = "InGaP, Molecular beam epitaxy, Net acceptor concentration, PS, Surface preparation, ZnSe",

author = "Shinji Saito and Yukie Nishikawa and Masaaki Onomura and Parbrook, \{Peter J.\} and Masayuki Ishikawa and Genichi Hatakoshi",

year = "1994",

month = may,

doi = "10.1143/JJAP.33.L705",

language = "English",

volume = "33",

pages = "L705--L707",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "5",

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TY - JOUR

T1 - Surface preparation effects for molecular beam epitaxial growth of ZnSe layers on InGaP layers

AU - Saito, Shinji

AU - Nishikawa, Yukie

AU - Onomura, Masaaki

AU - Parbrook, Peter J.

AU - Ishikawa, Masayuki

AU - Hatakoshi, Genichi

PY - 1994/5

Y1 - 1994/5

N2 - The effect of InGaP surface preparation has been investigated for the molecular beam epitaxial (MBE) growth of ZnSe. The net acceptor concentration profile near the interface of nitrogen-doped p-type ZnSe layers was strongly affected by the surface preparation of InGaP layers. The low net acceptor concentration region for the samples grown on a thermally treated (580 °C) or P2S5-treated InGaP surface was narrower than that region for the sample grown on a surface exposed to neither thermal treatment nor P2S5 treatment. Structures with InGaP buffer layers exposed to the surface treatments outlined here hold much promise for the reduction of the blue-green laser operation voltage.

AB - The effect of InGaP surface preparation has been investigated for the molecular beam epitaxial (MBE) growth of ZnSe. The net acceptor concentration profile near the interface of nitrogen-doped p-type ZnSe layers was strongly affected by the surface preparation of InGaP layers. The low net acceptor concentration region for the samples grown on a thermally treated (580 °C) or P2S5-treated InGaP surface was narrower than that region for the sample grown on a surface exposed to neither thermal treatment nor P2S5 treatment. Structures with InGaP buffer layers exposed to the surface treatments outlined here hold much promise for the reduction of the blue-green laser operation voltage.

KW - InGaP

KW - Molecular beam epitaxy

KW - Net acceptor concentration

KW - PS

KW - Surface preparation

KW - ZnSe

UR - https://www.scopus.com/pages/publications/0028440610

U2 - 10.1143/JJAP.33.L705

DO - 10.1143/JJAP.33.L705

M3 - Article

AN - SCOPUS:0028440610

SN - 0021-4922

VL - 33

SP - L705-L707

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 5

ER -

Surface preparation effects for molecular beam epitaxial growth of ZnSe layers on InGaP layers

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