Surface topography and optical properties of nitrogen doped ZnO thin films formed by radio frequency magnetron sputtering on fused silica substrates

We report here on the nitrogen doped ZnO (ZnO:N) thin films deposited by radio frequency (rf) magnetron sputtering using ZnN target (99.9% purity) on, unintentionally heated, fused silica substrates. After deposition Rapid Thermal Annealing (RTA) at 400 and 550°C for 1min in N₂ ambient have been performed on the ZnO:N thin films. The RTA impact on the optical and microstructural properties of ZnO:N thin films have been investigated by X-ray diffraction, Atomic Force Microscopy, Scanning and Transmission Electron Microscopy coupled with Energy Dispersive X-ray analysis, UV-VIS-NIR spectrophotometry and UV-VIS-NIR-Far IR Spectroscopic Ellipsometry. XRD and AFM results revealed an improvement in the crystalline state of ZnO:N and a reduction in the films surface roughness following RTA. The EDX spectrum showed the presence of the nitrogen in small quantities in the ZnO structure (nitrogen/oxygen=1/8). The optical constants of ZnO:N from UV down to Far IR spectral range together with the infrared active modes for ZnO:N are also reported.