@inbook{b2114fd9f175445cbd46af507db7339a,
title = "Surfactant role of (TM)Sb in MOVPE growth of metamorphic InGaAs graded buffers",
abstract = "We present a virtual substrate for high quality InAs epitaxial layer, obtained via metalorganic vapor-phase epitaxy growth of Sb-assisted In xGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53 \% to 100 \%. The use of Trimethylantimony (or its decomposition products) as a surfactant was found to be a suitable way to control defect formation during the relaxation process. Reliably uniform growth with good morphology was obtained on crystals with misorientation toward [111]B direction.",
keywords = "InAs, InGaAs, metamorphic buffer, MOVPE, surfactant, TMSb",
author = "A. Gocalinska and M. Manganaro and E. Pelucchi",
year = "2013",
doi = "10.1063/1.4848263",
language = "English",
isbn = "9780735411944",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "17--18",
booktitle = "Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012",
note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",
}