@inbook{77740ace2cc848de907a0139a6088d02,
title = "Synthesis and characterization of Al4SiC4: A “new” wide band gap semiconductor material",
abstract = "High temperature solution growth of Al4SiC4 single crystals was carried out from the melt of silicon and aluminium pieces in a graphite crucible used as carbon source (typically 1800°C under 1 bar of argon). The obtained crystals, in the mm scale, were then characterized by a variety of techniques including: Raman spectroscopy, transmission electron microscopy techniques, X-ray diffraction and UV-Vis-NIR spectroscopy. A good structural quality was revealed by TEM, ensuring a well resolved Raman spectrum. The UV-Vis transmission spectrum shows an optical gap located around 2-2.5 eV.",
keywords = "AlSiC, High temperature solution growth, Raman spectroscopy, Single crystal synthesis, UV-Vis transmission spectrum",
author = "D. Zevgitis and O. Chaix-Pluchery and B. Doisneau and M. Modreanu and \{La Manna\}, J. and E. Sarigiannidou and D. Chaussende",
note = "Publisher Copyright: {\textcopyright} (2014) Trans Tech Publications, Switzerland.; European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
year = "2015",
doi = "10.4028/www.scientific.net/MSF.821-823.974",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "974--977",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
address = "Switzerland",
}