Technology development challenges for advanced group IV semiconductor devices

  • Cor Claeys
  • , Hiro Arimura
  • , Nadine Collaert
  • , Jerome Mitard
  • , Rita Rooyackers
  • , Eddy Simoen
  • , Anne Vandooren
  • , Anabela Veloso
  • , Niamh Waldron
  • , Liesbeth Witters
  • , Aaron Thean

Research output: Contribution to journalArticlepeer-review

Abstract

Advanced devices are not only driven by minimum device geometry, performance enhancement, and cost issues, but also require a low power consumption. Device scaling for higher performance and lower power consumption necessitates the introduction of advanced process modules, new materials new device architectures and, finally, even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated.

Original languageEnglish
Pages (from-to)2820-2833
Number of pages14
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume213
Issue number11
DOIs
Publication statusPublished - 1 Nov 2016
Externally publishedYes

Keywords

  • devices
  • field-effect transistors
  • germanium
  • group IV semiconductors
  • strain engineering

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