Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

Wenbin Chen; Kevin G. McCarthy; Mehmet Çopuroǧlu; Shane O'Brien; Richard Winfield; Alan Mathewson

doi:10.1016/j.tsf.2011.12.037

Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

Wenbin Chen
, Kevin G. McCarthy
, Mehmet Çopuroǧlu
, Shane O'Brien
, Richard Winfield
, Alan Mathewson

Guilin University of Electronic Technology

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 °C and 750 °C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

Original language	English
Pages (from-to)	4523-4526
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2011.12.037
Publication status	Published - 1 May 2012

Keywords

High-k
PMNT
Temperature
Thin-films

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10.1016/j.tsf.2011.12.037

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abstract = "This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 °C and 750 °C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.",

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author = "Wenbin Chen and McCarthy, \{Kevin G.\} and Mehmet {\c C}opuroǧlu and Shane O'Brien and Richard Winfield and Alan Mathewson",

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AU - Chen, Wenbin

AU - McCarthy, Kevin G.

AU - Çopuroǧlu, Mehmet

AU - O'Brien, Shane

AU - Winfield, Richard

AU - Mathewson, Alan

PY - 2012/5/1

Y1 - 2012/5/1

N2 - This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 °C and 750 °C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

AB - This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 °C and 750 °C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

KW - High-k

KW - PMNT

KW - Temperature

KW - Thin-films

UR - https://www.scopus.com/pages/publications/84862826792

U2 - 10.1016/j.tsf.2011.12.037

DO - 10.1016/j.tsf.2011.12.037

M3 - Article

AN - SCOPUS:84862826792

SN - 0040-6090

VL - 520

SP - 4523

EP - 4526

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

Abstract

Keywords

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