Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer

Ultra-violet light emitting diodes with an increased efficiency have been produced. The increase in efficiency was brought about by the introduction of a thin GaN layer between the AlN buffer and the subsequent AlGaN layers. The GaN interlayer causes a reduction in the number of threading dislocations that propagate through the ultra-violet light emitting structure. Temperature dependent electroluminescence measurements show an improved performance at temperatures up to 400 K.