Temperature profiling of high-power semiconductor lasers

Peter O'Brien; James O'Callaghan; John McInerney

doi:10.1109/cleo.1998.676105

Temperature profiling of high-power semiconductor lasers

Peter O'Brien
, James O'Callaghan
, John McInerney

University College Cork

Research output: Contribution to conference › Paper › peer-review

Abstract

A novel technique is presented to measure the internal transverse and longitudinal temperature distributions within high-power, broad-area lasers with a resolution < 1°C, based on tracking the peaks of the spontaneous emission spectra from various points in the active region. The rationale of this technique is presented and its experimental application demonstrated.

Original language	English
Pages	236
Number of pages	1
DOIs	https://doi.org/10.1109/cleo.1998.676105
Publication status	Published - 1998
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: 3 May 1998 → 8 May 1998

Conference

Conference	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	3/05/98 → 8/05/98

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10.1109/cleo.1998.676105

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@conference{4a3732aceb0a4be080d6d3534b4d2f84,

title = "Temperature profiling of high-power semiconductor lasers",

abstract = "A novel technique is presented to measure the internal transverse and longitudinal temperature distributions within high-power, broad-area lasers with a resolution < 1°C, based on tracking the peaks of the spontaneous emission spectra from various points in the active region. The rationale of this technique is presented and its experimental application demonstrated.",

author = "Peter O'Brien and James O'Callaghan and John McInerney",

year = "1998",

doi = "10.1109/cleo.1998.676105",

language = "English",

pages = "236",

note = "Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 03-05-1998 Through 08-05-1998",

}

TY - CONF

T1 - Temperature profiling of high-power semiconductor lasers

AU - O'Brien, Peter

AU - O'Callaghan, James

AU - McInerney, John

PY - 1998

Y1 - 1998

N2 - A novel technique is presented to measure the internal transverse and longitudinal temperature distributions within high-power, broad-area lasers with a resolution < 1°C, based on tracking the peaks of the spontaneous emission spectra from various points in the active region. The rationale of this technique is presented and its experimental application demonstrated.

AB - A novel technique is presented to measure the internal transverse and longitudinal temperature distributions within high-power, broad-area lasers with a resolution < 1°C, based on tracking the peaks of the spontaneous emission spectra from various points in the active region. The rationale of this technique is presented and its experimental application demonstrated.

UR - https://www.scopus.com/pages/publications/0031634570

U2 - 10.1109/cleo.1998.676105

DO - 10.1109/cleo.1998.676105

M3 - Paper

AN - SCOPUS:0031634570

SP - 236

T2 - Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO

Y2 - 3 May 1998 through 8 May 1998

ER -

Temperature profiling of high-power semiconductor lasers

Abstract

Conference

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