Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

Guy Matmon; Stephen A. Lynch; Paul Townsend; Douglas J. Paul; Mike Baint; Harry S. Gamble; Jing Zhang; Zoran Ikonic; Robert W. Kelsall; Paul Harrison

doi:10.1109/GROUP4.2005.1516386

Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

Guy Matmon
, Stephen A. Lynch
, Paul Townsend
, Douglas J. Paul
, Mike Baint
, Harry S. Gamble
, Jing Zhang
, Zoran Ikonic
, Robert W. Kelsall
, Paul Harrison

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

Original language	English
Title of host publication	2005 IEEE International Conference on Group IV Photonics
Pages	13-15
Number of pages	3
DOIs	https://doi.org/10.1109/GROUP4.2005.1516386
Publication status	Published - 2005
Externally published	Yes
Event	2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium Duration: 21 Sep 2005 → 23 Sep 2005

Publication series

Name	2005 IEEE International Conference on Group IV Photonics
Volume	2005

Conference

Conference	2005 IEEE International Conference on Group IV Photonics
Country/Territory	Belgium
City	Antwerp
Period	21/09/05 → 23/09/05

Access to Document

10.1109/GROUP4.2005.1516386

Cite this

Matmon, G., Lynch, S. A., Townsend, P., Paul, D. J., Baint, M., Gamble, H. S., Zhang, J., Ikonic, Z., Kelsall, R. W., & Harrison, P. (2005). Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. In 2005 IEEE International Conference on Group IV Photonics (pp. 13-15). Article 1516386 (2005 IEEE International Conference on Group IV Photonics; Vol. 2005). https://doi.org/10.1109/GROUP4.2005.1516386

@inbook{2adae0d9c8f74cfe90b0524892f6c6ff,

title = "Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature",

abstract = "The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.",

author = "Guy Matmon and Lynch, \{Stephen A.\} and Paul Townsend and Paul, \{Douglas J.\} and Mike Baint and Gamble, \{Harry S.\} and Jing Zhang and Zoran Ikonic and Kelsall, \{Robert W.\} and Paul Harrison",

year = "2005",

doi = "10.1109/GROUP4.2005.1516386",

language = "English",

isbn = "0780390709",

series = "2005 IEEE International Conference on Group IV Photonics",

pages = "13--15",

booktitle = "2005 IEEE International Conference on Group IV Photonics",

note = "2005 IEEE International Conference on Group IV Photonics ; Conference date: 21-09-2005 Through 23-09-2005",

}

Matmon, G, Lynch, SA, Townsend, P, Paul, DJ, Baint, M, Gamble, HS, Zhang, J, Ikonic, Z, Kelsall, RW & Harrison, P 2005, Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. in 2005 IEEE International Conference on Group IV Photonics., 1516386, 2005 IEEE International Conference on Group IV Photonics, vol. 2005, pp. 13-15, 2005 IEEE International Conference on Group IV Photonics, Antwerp, Belgium, 21/09/05. https://doi.org/10.1109/GROUP4.2005.1516386

Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. / Matmon, Guy; Lynch, Stephen A.; Townsend, Paul et al.
2005 IEEE International Conference on Group IV Photonics. 2005. p. 13-15 1516386 (2005 IEEE International Conference on Group IV Photonics; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

AU - Matmon, Guy

AU - Lynch, Stephen A.

AU - Townsend, Paul

AU - Paul, Douglas J.

AU - Baint, Mike

AU - Gamble, Harry S.

AU - Zhang, Jing

AU - Ikonic, Zoran

AU - Kelsall, Robert W.

AU - Harrison, Paul

PY - 2005

Y1 - 2005

N2 - The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

AB - The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

UR - https://www.scopus.com/pages/publications/33746843612

U2 - 10.1109/GROUP4.2005.1516386

DO - 10.1109/GROUP4.2005.1516386

M3 - Chapter

AN - SCOPUS:33746843612

SN - 0780390709

SN - 9780780390706

T3 - 2005 IEEE International Conference on Group IV Photonics

SP - 13

EP - 15

BT - 2005 IEEE International Conference on Group IV Photonics

T2 - 2005 IEEE International Conference on Group IV Photonics

Y2 - 21 September 2005 through 23 September 2005

ER -

Matmon G, Lynch SA, Townsend P, Paul DJ, Baint M, Gamble HS et al. Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature. In 2005 IEEE International Conference on Group IV Photonics. 2005. p. 13-15. 1516386. (2005 IEEE International Conference on Group IV Photonics). doi: 10.1109/GROUP4.2005.1516386

Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

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