Abstract
A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes.
| Original language | English |
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| Pages | 217-220 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 IEEE International Conference on Microelectronic Test Structures, ICMTS - Trento, Italy Duration: 25 Mar 1996 → 28 Mar 1996 |
Conference
| Conference | Proceedings of the 1996 IEEE International Conference on Microelectronic Test Structures, ICMTS |
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| City | Trento, Italy |
| Period | 25/03/96 → 28/03/96 |