Test structure for investigating activated doping concentrations in polycrystalline silicon

S. Moran; P. K. Hurley; A. Mathewson

Test structure for investigating activated doping concentrations in polycrystalline silicon

S. Moran
, P. K. Hurley
, A. Mathewson

Research output: Contribution to conference › Paper › peer-review

Abstract

A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes.

Original language	English
Pages	217-220
Number of pages	4
Publication status	Published - 1996
Event	Proceedings of the 1996 IEEE International Conference on Microelectronic Test Structures, ICMTS - Trento, Italy Duration: 25 Mar 1996 → 28 Mar 1996

Conference

Conference	Proceedings of the 1996 IEEE International Conference on Microelectronic Test Structures, ICMTS
City	Trento, Italy
Period	25/03/96 → 28/03/96

Cite this

@conference{8899930b4334450da86b3d879a367ec0,

title = "Test structure for investigating activated doping concentrations in polycrystalline silicon",

abstract = "A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes.",

author = "S. Moran and Hurley, \{P. K.\} and A. Mathewson",

year = "1996",

language = "English",

pages = "217--220",

note = "Proceedings of the 1996 IEEE International Conference on Microelectronic Test Structures, ICMTS ; Conference date: 25-03-1996 Through 28-03-1996",

}

TY - CONF

T1 - Test structure for investigating activated doping concentrations in polycrystalline silicon

AU - Moran, S.

AU - Hurley, P. K.

AU - Mathewson, A.

PY - 1996

Y1 - 1996

N2 - A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes.

AB - A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes.

UR - https://www.scopus.com/pages/publications/0029723275

M3 - Paper

AN - SCOPUS:0029723275

SP - 217

EP - 220

T2 - Proceedings of the 1996 IEEE International Conference on Microelectronic Test Structures, ICMTS

Y2 - 25 March 1996 through 28 March 1996

ER -

Test structure for investigating activated doping concentrations in polycrystalline silicon

Abstract

Conference

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