@inbook{cd645139800142c1bc8410337528a6d9,
title = "Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2 field-effect-transistors",
abstract = "Greek crosses and TLM test structures were fabricated and characterized along with top-gate field effect transistors. We also show the usefulness and adaptation of a single TLM structure into multiple bottom-gate FETs that allow for extraction of contact resistance and typical device parameters for direct correlation on the same TMD flake enabling very little variability that can occur 'flake to flake'. Sheet resistance and contact resistance were successfully extracted and improvement in device performance was demonstrated with C-V and I-V measurements.",
keywords = "Contact resistance, Greek cross, High-k, MoS, TLM, Top-gated transistor, Ultra-high vacuum",
author = "Pavel Bolshakov and Peng Zhao and Smyth, \{Christopher M.\} and Angelica Azcatl and Wallace, \{Robert M.\} and Young, \{Chadwin D.\} and Hurley, \{Paul K.\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 ; Conference date: 27-03-2017 Through 30-03-2017",
year = "2017",
month = jun,
day = "20",
doi = "10.1109/ICMTS.2017.7954262",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Conference of Microelectronic Test Structures, ICMTS 2017",
address = "United States",
}