TfC16. Growth of perovksite plzt thin films by dual ion beam sputtering

D. A. Tossell; N. M. Shorrocks; J. S. Obhi; R. W. Whatmore

doi:10.1080/00150199208015603

TfC16. Growth of perovksite plzt thin films by dual ion beam sputtering

D. A. Tossell
, N. M. Shorrocks
, J. S. Obhi
, R. W. Whatmore

Tyndall Micronano Electronics

GEC-Marconi Materials Technology Ltd

Research output: Contribution to journal › Article › peer-review

Abstract

PLZT thin films have been deposited using the emerging PVD technique of dual ion-beam sputtering (DIBS). The DIBS process produces high quality orientated perovskite films of bulk refractive index, good stoichiometry and full density, i.e., few pinholes. Films have been formed at 500-600°C onto sapphire, fused silica, MgO and silicon substrates by sputtering from an adjustable composite PLZT ceramic/Ti and Pb metallic target. Some substrates were coated with platinum prior to deposition to allow longitudinal electrical measurements on the films. Perovskite leadtitanate PLZT (0/0/100), PLZT (10/0/100) and PLZT (28/0/100) films have been grown, the former two are of interest for thin film pyroelectric detectors whereas the latter is a quadratic electro-optic suited to optical waveguide, shutter and switching applications.

Original language	English
Pages (from-to)	297-302
Number of pages	6
Journal	Ferroelectrics
Volume	134
Issue number	1
DOIs	https://doi.org/10.1080/00150199208015603
Publication status	Published - 1 Sep 1992

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abstract = "PLZT thin films have been deposited using the emerging PVD technique of dual ion-beam sputtering (DIBS). The DIBS process produces high quality orientated perovskite films of bulk refractive index, good stoichiometry and full density, i.e., few pinholes. Films have been formed at 500-600°C onto sapphire, fused silica, MgO and silicon substrates by sputtering from an adjustable composite PLZT ceramic/Ti and Pb metallic target. Some substrates were coated with platinum prior to deposition to allow longitudinal electrical measurements on the films. Perovskite leadtitanate PLZT (0/0/100), PLZT (10/0/100) and PLZT (28/0/100) films have been grown, the former two are of interest for thin film pyroelectric detectors whereas the latter is a quadratic electro-optic suited to optical waveguide, shutter and switching applications.",

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AU - Tossell, D. A.

AU - Shorrocks, N. M.

AU - Obhi, J. S.

AU - Whatmore, R. W.

PY - 1992/9/1

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AB - PLZT thin films have been deposited using the emerging PVD technique of dual ion-beam sputtering (DIBS). The DIBS process produces high quality orientated perovskite films of bulk refractive index, good stoichiometry and full density, i.e., few pinholes. Films have been formed at 500-600°C onto sapphire, fused silica, MgO and silicon substrates by sputtering from an adjustable composite PLZT ceramic/Ti and Pb metallic target. Some substrates were coated with platinum prior to deposition to allow longitudinal electrical measurements on the films. Perovskite leadtitanate PLZT (0/0/100), PLZT (10/0/100) and PLZT (28/0/100) films have been grown, the former two are of interest for thin film pyroelectric detectors whereas the latter is a quadratic electro-optic suited to optical waveguide, shutter and switching applications.

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TfC16. Growth of perovksite plzt thin films by dual ion beam sputtering

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