The adsorption of triethylgallium on GaAs (100) at 300 K

D. S. Buhaenko; S. M. Francis; P. A. Goulding; M. E. Pemble

doi:10.1016/0042-207X(90)93837-9

The adsorption of triethylgallium on GaAs (100) at 300 K

D. S. Buhaenko
, S. M. Francis
, P. A. Goulding
, M. E. Pemble

University of Manchester

Research output: Contribution to journal › Article › peer-review

Abstract

The adsorption of a typical GaAs MOVPE precursor, triethylgallium (TEG) on an As-rich GaAs (100) surface at 300 K is confirmed via Auger and desorption measurements. Desorption data are consistent with the sequential decomposition of a diethylgallium species and indicate that both ethane and ethene are produced in the decomposition of the surface species over the temperature range 300-770 K. The formation of diethylgallium via 300 K adsorption is further supported by AES intensity data which reveal that the surface species has an apparent stoichiometry of 1 Ga to 4(±0.5) C. Carbon (1s VV) lineshapes suggest that the ethyl groups are not significantly perturbed via adsorption.

Original language	English
Pages (from-to)	972-974
Number of pages	3
Journal	Vacuum
Volume	41
Issue number	4-6
DOIs	https://doi.org/10.1016/0042-207X(90)93837-9
Publication status	Published - 1990

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@article{23a71646029142af9f9648b424754a36,

title = "The adsorption of triethylgallium on GaAs (100) at 300 K",

abstract = "The adsorption of a typical GaAs MOVPE precursor, triethylgallium (TEG) on an As-rich GaAs (100) surface at 300 K is confirmed via Auger and desorption measurements. Desorption data are consistent with the sequential decomposition of a diethylgallium species and indicate that both ethane and ethene are produced in the decomposition of the surface species over the temperature range 300-770 K. The formation of diethylgallium via 300 K adsorption is further supported by AES intensity data which reveal that the surface species has an apparent stoichiometry of 1 Ga to 4(±0.5) C. Carbon (1s VV) lineshapes suggest that the ethyl groups are not significantly perturbed via adsorption.",

author = "Buhaenko, \{D. S.\} and Francis, \{S. M.\} and Goulding, \{P. A.\} and Pemble, \{M. E.\}",

year = "1990",

doi = "10.1016/0042-207X(90)93837-9",

language = "English",

volume = "41",

pages = "972--974",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

number = "4-6",

}

TY - JOUR

T1 - The adsorption of triethylgallium on GaAs (100) at 300 K

AU - Buhaenko, D. S.

AU - Francis, S. M.

AU - Goulding, P. A.

AU - Pemble, M. E.

PY - 1990

Y1 - 1990

N2 - The adsorption of a typical GaAs MOVPE precursor, triethylgallium (TEG) on an As-rich GaAs (100) surface at 300 K is confirmed via Auger and desorption measurements. Desorption data are consistent with the sequential decomposition of a diethylgallium species and indicate that both ethane and ethene are produced in the decomposition of the surface species over the temperature range 300-770 K. The formation of diethylgallium via 300 K adsorption is further supported by AES intensity data which reveal that the surface species has an apparent stoichiometry of 1 Ga to 4(±0.5) C. Carbon (1s VV) lineshapes suggest that the ethyl groups are not significantly perturbed via adsorption.

AB - The adsorption of a typical GaAs MOVPE precursor, triethylgallium (TEG) on an As-rich GaAs (100) surface at 300 K is confirmed via Auger and desorption measurements. Desorption data are consistent with the sequential decomposition of a diethylgallium species and indicate that both ethane and ethene are produced in the decomposition of the surface species over the temperature range 300-770 K. The formation of diethylgallium via 300 K adsorption is further supported by AES intensity data which reveal that the surface species has an apparent stoichiometry of 1 Ga to 4(±0.5) C. Carbon (1s VV) lineshapes suggest that the ethyl groups are not significantly perturbed via adsorption.

UR - https://www.scopus.com/pages/publications/0025543428

U2 - 10.1016/0042-207X(90)93837-9

DO - 10.1016/0042-207X(90)93837-9

M3 - Article

AN - SCOPUS:0025543428

SN - 0042-207X

VL - 41

SP - 972

EP - 974

JO - Vacuum

JF - Vacuum

IS - 4-6

ER -

The adsorption of triethylgallium on GaAs (100) at 300 K

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