The adsorption of triethylgallium on GaAs(100) at 300 K: adsorption kinetics from optical second harmonic generation transients

M. E. Pemble; J. T. Allen; D. S. Buhaenko; S. M. Francis; P. A. Goulding; J. Lee; M. J. Parrott

doi:10.1016/0169-4332(90)90116-H

The adsorption of triethylgallium on GaAs(100) at 300 K: adsorption kinetics from optical second harmonic generation transients

M. E. Pemble
, J. T. Allen
, D. S. Buhaenko
, S. M. Francis
, P. A. Goulding
, J. Lee
, M. J. Parrott

University of Manchester

Research output: Contribution to journal › Article › peer-review

Abstract

Data for the adsorption of triethylgallium on GaAs(100) obtained using the technique of optical second harmonic generation (SHG) are analysed using the assumption that the non-linear second-order surface susceptability _Xs(2) varies as a linear function of surface coverage. Equations are generated which relate the change in SHG intensity with coverage for both a non-dissociative and a dissociative Langmuir adsorption isotherm. Solution of these non-linear equations yields parameters related to the sticking coefficient and the saturation coverage. For the system studied here, the best fit is achieved using a non-dissociative Langmuir model. However the fitting process reveals that if the assumptions are valid, it must be concluded that the system does not follow Langmuir kinetics but adopts a more complex mechanism in which the sticking coefficient increases slightly with increasing coverage.

Original language	English
Pages (from-to)	32-35
Number of pages	4
Journal	Applied Surface Science
Volume	46
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(90)90116-H
Publication status	Published - 2 Dec 1990

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title = "The adsorption of triethylgallium on GaAs(100) at 300 K: adsorption kinetics from optical second harmonic generation transients",

abstract = "Data for the adsorption of triethylgallium on GaAs(100) obtained using the technique of optical second harmonic generation (SHG) are analysed using the assumption that the non-linear second-order surface susceptability Xs(2) varies as a linear function of surface coverage. Equations are generated which relate the change in SHG intensity with coverage for both a non-dissociative and a dissociative Langmuir adsorption isotherm. Solution of these non-linear equations yields parameters related to the sticking coefficient and the saturation coverage. For the system studied here, the best fit is achieved using a non-dissociative Langmuir model. However the fitting process reveals that if the assumptions are valid, it must be concluded that the system does not follow Langmuir kinetics but adopts a more complex mechanism in which the sticking coefficient increases slightly with increasing coverage.",

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year = "1990",

month = dec,

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doi = "10.1016/0169-4332(90)90116-H",

language = "English",

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T1 - The adsorption of triethylgallium on GaAs(100) at 300 K

T2 - adsorption kinetics from optical second harmonic generation transients

AU - Pemble, M. E.

AU - Allen, J. T.

AU - Buhaenko, D. S.

AU - Francis, S. M.

AU - Goulding, P. A.

AU - Lee, J.

AU - Parrott, M. J.

PY - 1990/12/2

Y1 - 1990/12/2

N2 - Data for the adsorption of triethylgallium on GaAs(100) obtained using the technique of optical second harmonic generation (SHG) are analysed using the assumption that the non-linear second-order surface susceptability Xs(2) varies as a linear function of surface coverage. Equations are generated which relate the change in SHG intensity with coverage for both a non-dissociative and a dissociative Langmuir adsorption isotherm. Solution of these non-linear equations yields parameters related to the sticking coefficient and the saturation coverage. For the system studied here, the best fit is achieved using a non-dissociative Langmuir model. However the fitting process reveals that if the assumptions are valid, it must be concluded that the system does not follow Langmuir kinetics but adopts a more complex mechanism in which the sticking coefficient increases slightly with increasing coverage.

AB - Data for the adsorption of triethylgallium on GaAs(100) obtained using the technique of optical second harmonic generation (SHG) are analysed using the assumption that the non-linear second-order surface susceptability Xs(2) varies as a linear function of surface coverage. Equations are generated which relate the change in SHG intensity with coverage for both a non-dissociative and a dissociative Langmuir adsorption isotherm. Solution of these non-linear equations yields parameters related to the sticking coefficient and the saturation coverage. For the system studied here, the best fit is achieved using a non-dissociative Langmuir model. However the fitting process reveals that if the assumptions are valid, it must be concluded that the system does not follow Langmuir kinetics but adopts a more complex mechanism in which the sticking coefficient increases slightly with increasing coverage.

UR - https://www.scopus.com/pages/publications/0025543370

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DO - 10.1016/0169-4332(90)90116-H

M3 - Article

AN - SCOPUS:0025543370

SN - 0169-4332

VL - 46

SP - 32

EP - 35

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

The adsorption of triethylgallium on GaAs(100) at 300 K: adsorption kinetics from optical second harmonic generation transients

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