The carbon co-implant with spike RTA solution for phosphorus extension

Bartek J. Pawlak; Ray Duffy; Emmanuel Augendre; Simone Seven; Tom Janssens; Philippe Absil; Wilfried Vandervorst; Erik Collart; Susan Felch; Robert Schreutelkamp; Nick Cowern

doi:10.1557/proc-0912-c01-06

The carbon co-implant with spike RTA solution for phosphorus extension

Bartek J. Pawlak
, Ray Duffy
, Emmanuel Augendre
, Simone Seven
, Tom Janssens
, Philippe Absil
, Wilfried Vandervorst
, Erik Collart
, Susan Felch
, Robert Schreutelkamp
, Nick Cowern

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Si_i) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth X_j = 20 nm (taken at 5 × 10¹⁸ at/cm ³), abruptness 3 nm/dec. and Rs = 326 Ω/. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

Original language	English
Title of host publication	Doping Engineering for Device Fabrication
Publisher	Materials Research Society
Pages	33-38
Number of pages	6
ISBN (Print)	1558998683, 9781558998681
DOIs	https://doi.org/10.1557/proc-0912-c01-06
Publication status	Published - 2006
Externally published	Yes
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: 17 Apr 2006 → 21 Apr 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	912
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	17/04/06 → 21/04/06

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10.1557/proc-0912-c01-06

Cite this

Pawlak, B. J., Duffy, R., Augendre, E., Seven, S., Janssens, T., Absil, P., Vandervorst, W., Collart, E., Felch, S., Schreutelkamp, R., & Cowern, N. (2006). The carbon co-implant with spike RTA solution for phosphorus extension. In Doping Engineering for Device Fabrication (pp. 33-38). (Materials Research Society Symposium Proceedings; Vol. 912). Materials Research Society. https://doi.org/10.1557/proc-0912-c01-06

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title = "The carbon co-implant with spike RTA solution for phosphorus extension",

abstract = "As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at/cm 3), abruptness 3 nm/dec. and Rs = 326 Ω/. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.",

author = "Pawlak, \{Bartek J.\} and Ray Duffy and Emmanuel Augendre and Simone Seven and Tom Janssens and Philippe Absil and Wilfried Vandervorst and Erik Collart and Susan Felch and Robert Schreutelkamp and Nick Cowern",

year = "2006",

doi = "10.1557/proc-0912-c01-06",

language = "English",

isbn = "1558998683",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "33--38",

booktitle = "Doping Engineering for Device Fabrication",

note = "2006 MRS Spring Meeting ; Conference date: 17-04-2006 Through 21-04-2006",

}

Pawlak, BJ, Duffy, R, Augendre, E, Seven, S, Janssens, T, Absil, P, Vandervorst, W, Collart, E, Felch, S, Schreutelkamp, R & Cowern, N 2006, The carbon co-implant with spike RTA solution for phosphorus extension. in Doping Engineering for Device Fabrication. Materials Research Society Symposium Proceedings, vol. 912, Materials Research Society, pp. 33-38, 2006 MRS Spring Meeting, San Francisco, CA, United States, 17/04/06. https://doi.org/10.1557/proc-0912-c01-06

TY - CHAP

T1 - The carbon co-implant with spike RTA solution for phosphorus extension

AU - Pawlak, Bartek J.

AU - Duffy, Ray

AU - Augendre, Emmanuel

AU - Seven, Simone

AU - Janssens, Tom

AU - Absil, Philippe

AU - Vandervorst, Wilfried

AU - Collart, Erik

AU - Felch, Susan

AU - Schreutelkamp, Robert

AU - Cowern, Nick

PY - 2006

Y1 - 2006

N2 - As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at/cm 3), abruptness 3 nm/dec. and Rs = 326 Ω/. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

AB - As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at/cm 3), abruptness 3 nm/dec. and Rs = 326 Ω/. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

UR - https://www.scopus.com/pages/publications/33751043211

U2 - 10.1557/proc-0912-c01-06

DO - 10.1557/proc-0912-c01-06

M3 - Chapter

AN - SCOPUS:33751043211

SN - 1558998683

SN - 9781558998681

T3 - Materials Research Society Symposium Proceedings

SP - 33

EP - 38

BT - Doping Engineering for Device Fabrication

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 17 April 2006 through 21 April 2006

ER -

The carbon co-implant with spike RTA solution for phosphorus extension

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