The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System

Ailbe O'Manachain

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Device and Materials Reliability
Publication status	Published - 2013

Cite this

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title = "The Characterization and Passivation of Fixed Oxide Charges and Interface States in the \$\$\textbackslash{}backslash\$hbox \$\{\$Al\$\}\$ \_ \$\{\$2\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$O\$\}\$ \_ \$\{\$3\$\}\$/\$\textbackslash{}backslash\$hbox \$\{\$InGaAs\$\}\$ \$ MOS System",

author = "Ailbe O'Manachain",

year = "2013",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System

AU - O'Manachain, Ailbe

PY - 2013

Y1 - 2013

M3 - Article

SN - 1530-4388

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

ER -