The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System

Paul K. Hurley; Eamon O'Connor; Vladimir Djara; Scott Monaghan; Ian M. Povey; Rathnait D. Long; Brendan Sheehan; Jun Lin; Paul C. McIntyre; Barry Brennan; Robert M. Wallace; Martyn E. Pemble; Karim Cherkaoui

doi:10.1109/TDMR.2013.2282216

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System

Paul K. Hurley
, Eamon O'Connor
, Vladimir Djara
, Scott Monaghan
, Ian M. Povey
, Rathnait D. Long
, Brendan Sheehan
, Jun Lin
, Paul C. McIntyre
, Barry Brennan
, Robert M. Wallace
, Martyn E. Pemble
, Karim Cherkaoui

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Device and Materials Reliability
DOIs	https://doi.org/10.1109/TDMR.2013.2282216
Publication status	Published - 2013

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10.1109/TDMR.2013.2282216

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Hurley, P. K., O'Connor, E., Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., Brennan, B., Wallace, R. M., Pemble, M. E., & Cherkaoui, K. (2013). The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. IEEE Transactions on Device and Materials Reliability. https://doi.org/10.1109/TDMR.2013.2282216

@article{6b2e8fc3b9b44614a5a5944433b89445,

title = "The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System",

author = "Hurley, \{Paul K.\} and Eamon O'Connor and Vladimir Djara and Scott Monaghan and Povey, \{Ian M.\} and Long, \{Rathnait D.\} and Brendan Sheehan and Jun Lin and McIntyre, \{Paul C.\} and Barry Brennan and Wallace, \{Robert M.\} and Pemble, \{Martyn E.\} and Karim Cherkaoui",

year = "2013",

doi = "10.1109/TDMR.2013.2282216",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hurley, PK, O'Connor, E, Djara, V, Monaghan, S , Povey, IM, Long, RD, Sheehan, B , Lin, J, McIntyre, PC, Brennan, B, Wallace, RM, Pemble, ME & Cherkaoui, K 2013, 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System', IEEE Transactions on Device and Materials Reliability. https://doi.org/10.1109/TDMR.2013.2282216

TY - JOUR

T1 - The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System

AU - Hurley, Paul K.

AU - O'Connor, Eamon

AU - Djara, Vladimir

AU - Monaghan, Scott

AU - Povey, Ian M.

AU - Long, Rathnait D.

AU - Sheehan, Brendan

AU - Lin, Jun

AU - McIntyre, Paul C.

AU - Brennan, Barry

AU - Wallace, Robert M.

AU - Pemble, Martyn E.

AU - Cherkaoui, Karim

PY - 2013

Y1 - 2013

UR - https://publons.com/wos-op/publon/9241494/

U2 - 10.1109/TDMR.2013.2282216

DO - 10.1109/TDMR.2013.2282216

M3 - Article

SN - 1530-4388

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

ER -

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System

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