The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System

Paul K Hurley; Éamon O'Connor; Vladimir Djara; Scott Monaghan; Ian M Povey; Rathnait D Long; Brendan Sheehan; Jun Lin; Paul C McIntyre; Barry Brennan; others

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System

Paul K Hurley
, Éamon O'Connor
, Vladimir Djara
, Scott Monaghan
, Ian M Povey
, Rathnait D Long
, Brendan Sheehan
, Jun Lin
, Paul C McIntyre
, Barry Brennan
, others

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Device and Materials Reliability
Publication status	Published - 2013

Cite this

Hurley, P. K., O'Connor, É., Djara, V., Monaghan, S., Povey, I. M., Long, R. D., Sheehan, B., Lin, J., McIntyre, P. C., Brennan, B., & others (2013). The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System. IEEE Transactions on Device and Materials Reliability.

@article{1e67416db0564487b28a15a2c5435404,

title = "The Characterization and Passivation of Fixed Oxide Charges and Interface States in the \$\$\textbackslash{}backslash\$hbox \$\{\$Al\$\}\$ \_ \$\{\$2\$\}\$\$\textbackslash{}backslash\$hbox \$\{\$O\$\}\$ \_ \$\{\$3\$\}\$/\$\textbackslash{}backslash\$hbox \$\{\$InGaAs\$\}\$ \$ MOS System",

author = "Hurley, \{Paul K\} and {\'E}amon O'Connor and Vladimir Djara and Scott Monaghan and Povey, \{Ian M\} and Long, \{Rathnait D\} and Brendan Sheehan and Jun Lin and McIntyre, \{Paul C\} and Barry Brennan and others",

year = "2013",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Hurley, PK, O'Connor, É, Djara, V, Monaghan, S , Povey, IM, Long, RD, Sheehan, B, Lin, J, McIntyre, PC, Brennan, B & others 2013, 'The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System', IEEE Transactions on Device and Materials Reliability.

The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System. / Hurley, Paul K; O'Connor, Éamon; Djara, Vladimir et al.
In: IEEE Transactions on Device and Materials Reliability, 2013.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $$\backslash$hbox ${$Al$}$ _ ${$2$}$$\backslash$hbox ${$O$}$ _ ${$3$}$/$\backslash$hbox ${$InGaAs$}$ $ MOS System

AU - Hurley, Paul K

AU - O'Connor, Éamon

AU - Djara, Vladimir

AU - Monaghan, Scott

AU - Povey, Ian M

AU - Long, Rathnait D

AU - Sheehan, Brendan

AU - Lin, Jun

AU - McIntyre, Paul C

AU - Brennan, Barry

AU - others,

PY - 2013

Y1 - 2013

M3 - Article

SN - 1530-4388

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

ER -