@inbook{01faa742ad2b4fdcbd4a313a0fb82498,
title = "The comparison and combination of CMOS inductor Q-enhancement techniques",
abstract = "Much emphasis and blame has been placed on integrated silicon inductors and their poor Q values, leading to degradation in circuit performance, especially at RF and microwave frequencies. This is no more evident than in WLAN applications at 5.25 GHz where poor Q values can induce increased noise figure, power consumption and linearity deterioration. This paper will present a concise comparison of non-invasive Q-enhancement techniques using patterned ground shields, stacked metal, thick copper and differential inductors. A differential stacked metal inductor with patterned ground shield will also be demonstrated for its effectiveness.",
keywords = "Circuit optimization, CMOS technology, Degradation, Energy consumption, Inductors, Microwave frequencies, Noise figure, Radio frequency, Silicon, Wireless LAN",
author = "O. Murphy and J. Blackburn and P. Murphy and K. McCarthy and A. Murphy",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 High Frequency Postgraduate Student Colloquium ; Conference date: 08-09-2003 Through 09-09-2003",
year = "2003",
doi = "10.1109/HFPSC.2003.1242315",
language = "English",
series = "IEEE High Frequency Postgraduate Student Colloquium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "94--97",
booktitle = "2003 High Frequency Postgraduate Student Colloquium",
address = "United States",
}