The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)

Jin Ho Park; Mohammad Afzaal; Michael Kemmler; Paul O'Brien; David J. Otway; Jim Raftery; John Waters

doi:10.1039/b302896h

The deposition of thin films of CuME₂ by CVD techniques (M = In, Ga and E = S, Se)

Jin Ho Park
, Mohammad Afzaal
, Michael Kemmler
, Paul O'Brien
, David J. Otway
, Jim Raftery
, John Waters

University of Manchester
Imperial College London

Research output: Contribution to journal › Article › peer-review

Abstract

Thin film(s) of chalcopyrite CuME₂ (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E₂CNMeⁿHex)₃ and Cu(E ₂CNMeⁿHex)₂. Films were grown on various substrates between 350-500°C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Original language	English
Pages (from-to)	1942-1949
Number of pages	8
Journal	Journal of Materials Chemistry
Volume	13
Issue number	8
DOIs	https://doi.org/10.1039/b302896h
Publication status	Published - 1 Aug 2003
Externally published	Yes

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title = "The deposition of thin films of CuME2 by CVD techniques (M = In, Ga and E = S, Se)",

abstract = "Thin film(s) of chalcopyrite CuME2 (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E2CNMenHex)3 and Cu(E 2CNMenHex)2. Films were grown on various substrates between 350-500°C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.",

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AU - Park, Jin Ho

AU - Afzaal, Mohammad

AU - Kemmler, Michael

AU - O'Brien, Paul

AU - Otway, David J.

AU - Raftery, Jim

AU - Waters, John

PY - 2003/8/1

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N2 - Thin film(s) of chalcopyrite CuME2 (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E2CNMenHex)3 and Cu(E 2CNMenHex)2. Films were grown on various substrates between 350-500°C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

AB - Thin film(s) of chalcopyrite CuME2 (where M = In or Ga; E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) or aerosol-assisted chemical vapour deposition (AACVD) using the precursors M(E2CNMenHex)3 and Cu(E 2CNMenHex)2. Films were grown on various substrates between 350-500°C and characterized by X-ray diffraction, XPS, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

UR - https://www.scopus.com/pages/publications/0042567543

U2 - 10.1039/b302896h

DO - 10.1039/b302896h

M3 - Article

AN - SCOPUS:0042567543

SN - 0959-9428

VL - 13

SP - 1942

EP - 1949

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 8

ER -

The deposition of thin films of CuME₂ by CVD techniques (M = In, Ga and E = S, Se)

Abstract

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