@inproceedings{7568da5886de4f1286ee4a334f68c02b,
title = "The effect of dielectric stress on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs)",
abstract = "We present an experimental analysis on the effect of dielectric stress on the electrical characteristics of AlGaN/GaN HFETs. Issues such as maximum current (Id-max), gate leakage and current collapse are presented. Different dielectric deposition conditions were used to vary the amount of stress induced on the wafer and the devices were measured before and after passivation. A striking feature observed was the strong dependence of Id-max on the amount of stress induced by the dielectric. Id-max increases when the stress is tensile and reduces when it is compressive. The rise in leakage current was found to be dependent on the dielectric film itself and not on the stress induced, which suggests that a surface effect is responsible for the leakage mechanism.",
keywords = "Aluminum gallium nitride, Compressive stress, Dielectrics, Electric variables, Gallium nitride, Gate leakage, HEMTs, Leakage current, MODFETs, Tensile stress",
author = "Tan, \{W. S.\} and G. Hill and Houston, \{P. A.\} and Low, \{M. W.\} and Parbrook, \{P. J.\} and Airey, \{R. J.\}",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002 ; Conference date: 18-11-2002 Through 19-11-2002",
year = "2002",
doi = "10.1109/EDMO.2002.1174943",
language = "English",
series = "IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "130--135",
booktitle = "10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO 2002",
address = "United States",
}