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The effect of forming gas annealing on capacitance-voltage hysteresis in the high-$ j/In0. 53Ga0. 47As metal-oxide-semiconductor system

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Original languageUndefined/Unknown
Title of host publicationThe effect of forming gas annealing on capacitance-voltage hysteresis in the high-$ j/In0. 53Ga0. 47As metal-oxide-semiconductor system
Publication statusPublished - 2016

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