@inbook{1625a38781a8464ead4464ec87944ca4,
title = "The effect of high field stress on the capacitance/voltage characteristics of buried insulators formed by oxygen implantation",
abstract = "In thin-film SOI devices, where the body is fully depleted in normal device operation, the buried insulator has a pronounced effect on the transistor characteristics.1 In particular, the presence of fixed oxide charge and interface states situated at the body/insulator and the substrate/insulator interfaces will influence the electrostatics in the body region. Consequently, it is necessary to have a simple method for determining the density of fixed charge at the interfaces. Moreover, from the viewpoint of long term device stability it is necessary to assess how the magnitude of the fixed charge varies under the influence of electric field stress. Previous work has demonstrated how the high frequency capacitance/voltage (HFCV) plot can be used to determine the thickness of the body and buried oxide regions of SOI capacitors.2 This work extends the technique to allow the determination of the fixed oxide charge densities at both silicon/oxide interfaces, and outlines how the effects of high field stress can be interpreted.",
author = "Hurley, \{P. K.\} and S. Hall and W. Eccleston and Alderman, \{J. C.\}",
note = "Publisher Copyright: {\textcopyright} 1990 IEEE.; 1990 IEEE SOS/SOI Technology Conference ; Conference date: 02-10-1990 Through 04-10-1990",
year = "1990",
doi = "10.1109/SOSSOI.1990.145761",
language = "English",
series = "1990 IEEE SOS/SOI Technology Conference, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "160--161",
booktitle = "1990 IEEE SOS/SOI Technology Conference, Proceedings",
address = "United States",
}