The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon

B. J. O'Sullivan; P. K. Hurley; A. Mathewson; R. Beanland; R. Rodrigues; P. Kay

The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon

B. J. O'Sullivan
, P. K. Hurley
, A. Mathewson
, R. Beanland
, R. Rodrigues
, P. Kay

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The influence of oxide patterned layers on the thickness of SiO₂ films (30 to 70 A) grown on polycrystalline silicon by rapid thermal oxidation (RTO) is reported. Oxide thicknesses are examined using C- V and XTEM analysis. The measurements reveal significant oxide thickness increases (up to 50%) due to the presence of the oxide patterns, and the local temperature increases resulting from the surface patterns are estimated. The reasons for this effict are discussed, as are the device-level implications and the potential opportunities to exploit these findings.

Original language	English
Title of host publication	ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
Editors	R.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
Publisher	IEEE Computer Society
Pages	424-427
Number of pages	4
ISBN (Electronic)	2863322451, 9782863322451
Publication status	Published - 1999
Event	29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium Duration: 13 Sep 1999 → 15 Sep 1999

Publication series

Name	European Solid-State Device Research Conference
Volume	13-15 Sept. 1999
ISSN (Print)	1930-8876

Conference

Conference	29th European Solid-State Device Research Conference, ESSDERC 1999
Country/Territory	Belgium
City	Leuven
Period	13/09/99 → 15/09/99

Cite this

O'Sullivan, B. J., Hurley, P. K., Mathewson, A., Beanland, R., Rodrigues, R., & Kay, P. (1999). The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon. In R. P. Mertens, H. Grunbacher, H. E. Maes, & G. Declerck (Eds.), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference (pp. 424-427). Article 1505530 (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999). IEEE Computer Society.

O'Sullivan, B. J. ; Hurley, P. K. ; Mathewson, A. et al. / The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon. ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. editor / R.P. Mertens ; H. Grunbacher ; H.E. Maes ; G. Declerck. IEEE Computer Society, 1999. pp. 424-427 (European Solid-State Device Research Conference).

@inbook{8fbb96d9e57c43f4bd9cad148206e191,

title = "The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon",

abstract = "The influence of oxide patterned layers on the thickness of SiO2 films (30 to 70 A) grown on polycrystalline silicon by rapid thermal oxidation (RTO) is reported. Oxide thicknesses are examined using C- V and XTEM analysis. The measurements reveal significant oxide thickness increases (up to 50\%) due to the presence of the oxide patterns, and the local temperature increases resulting from the surface patterns are estimated. The reasons for this effict are discussed, as are the device-level implications and the potential opportunities to exploit these findings.",

author = "O'Sullivan, \{B. J.\} and Hurley, \{P. K.\} and A. Mathewson and R. Beanland and R. Rodrigues and P. Kay",

year = "1999",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "424--427",

editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",

booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",

address = "United States",

note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",

}

O'Sullivan, BJ, Hurley, PK, Mathewson, A, Beanland, R, Rodrigues, R & Kay, P 1999, The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon. in RP Mertens, H Grunbacher, HE Maes & G Declerck (eds), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference., 1505530, European Solid-State Device Research Conference, vol. 13-15 Sept. 1999, IEEE Computer Society, pp. 424-427, 29th European Solid-State Device Research Conference, ESSDERC 1999, Leuven, Belgium, 13/09/99.

The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon. / O'Sullivan, B. J.; Hurley, P. K.; Mathewson, A. et al.
ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. ed. / R.P. Mertens; H. Grunbacher; H.E. Maes; G. Declerck. IEEE Computer Society, 1999. p. 424-427 1505530 (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon

AU - O'Sullivan, B. J.

AU - Hurley, P. K.

AU - Mathewson, A.

AU - Beanland, R.

AU - Rodrigues, R.

AU - Kay, P.

PY - 1999

Y1 - 1999

N2 - The influence of oxide patterned layers on the thickness of SiO2 films (30 to 70 A) grown on polycrystalline silicon by rapid thermal oxidation (RTO) is reported. Oxide thicknesses are examined using C- V and XTEM analysis. The measurements reveal significant oxide thickness increases (up to 50%) due to the presence of the oxide patterns, and the local temperature increases resulting from the surface patterns are estimated. The reasons for this effict are discussed, as are the device-level implications and the potential opportunities to exploit these findings.

AB - The influence of oxide patterned layers on the thickness of SiO2 films (30 to 70 A) grown on polycrystalline silicon by rapid thermal oxidation (RTO) is reported. Oxide thicknesses are examined using C- V and XTEM analysis. The measurements reveal significant oxide thickness increases (up to 50%) due to the presence of the oxide patterns, and the local temperature increases resulting from the surface patterns are estimated. The reasons for this effict are discussed, as are the device-level implications and the potential opportunities to exploit these findings.

UR - https://www.scopus.com/pages/publications/84907900103

M3 - Chapter

AN - SCOPUS:84907900103

T3 - European Solid-State Device Research Conference

SP - 424

EP - 427

BT - ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference

A2 - Mertens, R.P.

A2 - Grunbacher, H.

A2 - Maes, H.E.

A2 - Declerck, G.

PB - IEEE Computer Society

T2 - 29th European Solid-State Device Research Conference, ESSDERC 1999

Y2 - 13 September 1999 through 15 September 1999

ER -

O'Sullivan BJ, Hurley PK, Mathewson A, Beanland R, Rodrigues R, Kay P. The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon. In Mertens RP, Grunbacher H, Maes HE, Declerck G, editors, ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. IEEE Computer Society. 1999. p. 424-427. 1505530. (European Solid-State Device Research Conference).

The effect of oxide patterned layers on the rapid thermal oxidation of polycrystalline silicon

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