The effects of using ALD-grown ZnO buffer layers on the properties of indium tin oxide grown by chemical solution deposition

In comparison to ITO films prepared by chemical solution deposition on bare substrates, the use of a ZnO buffer layer and Al ₂O ₃ barrier layer has been shown to have a significant effect on morphology, measured sheet resistance and therefore resistivity. In the case of quartz substrates, ITO resistivity decreased from 9.6×10 ^-3 Ω cm to 4.3×10 ^-3 Ω cm on incorporation of a ZnO buffer layer and Al ₂O ₃ barrier layer, both grown by ALD. A change in surface morphology was observed, due to the presence of the buffer layer, however, the ZnO buffer layer was not found to influence the XRD pattern of the ITO films.