The electromechanical properties of highly [100] oriented [Pb(Zr 0.52Ti0.48)O3, PZT] thin films

  • J. M. Marshall
  • , S. Corkovic
  • , Q. Zhang
  • , R. W. Whatmore
  • , C. Chima-Okereke
  • , W. L. Roberts
  • , A. J. Bushby
  • , M. J. Reece

Research output: Other outputpeer-review

Abstract

Lead zirconate titanate [Pb(Zr 0.52 Ti 0.48 )O 3 , PZT] thin films were deposited on Pt (111)/Ti/SiO 2 /Si and Pt (200)/Ti/SiO 2 /Si substrates by sol-gel method. Pyrolysis temperature and time were used to control the orientation of the thin films. A PbO buffer layer was also used to enhance the growth of (100)/(001) orientation. Poling highly (100) oriented PZT 52/48 thin films deposited on Pt (111) led to cracking and/or incomplete poling as a consequence of the additional residual stresses introduced by the a to c domain orientation switching. These problems of cracking and incomplete poling did not occur for the (100)/(001)-oriented PZT films deposited on the Pt (200), which possess high piezoelectric coefficients with maximum e 31,f and d 33,f of -13.9 4 C/m 2 and 80 25 pC/N, respectively. The elastic and electromechanical properties were measured using nanoindentation for films with different texture and compared with data obtained using a flexural method.

Original languageEnglish
Number of pages9
Edition1
Volume80
DOIs
Publication statusPublished - 1 Nov 2006

Publication series

NameIntegrated Ferroelectrics
PublisherTaylor and Francis Ltd.
ISSN (Print)1058-4587

Fingerprint

Dive into the research topics of 'The electromechanical properties of highly [100] oriented [Pb(Zr 0.52Ti0.48)O3, PZT] thin films'. Together they form a unique fingerprint.

Cite this