The formation and characterisation of lanthanum oxide based Si/high-k/NiSi gate stacks by electron-beam evaporation: An examination of in-situ amorphous silicon capping and NiSi formation
- P. K. Hurley
- , M. Pijolat
- , K. Cherkaoui
- , E. O. Connor
- , D. O'Connell
- , M. A. Negara
- , M. C. Lemme
- , H. D.B. Gottlob
- , M. Schmidt
- , K. Stegmaier
- , U. Schwalke
- , S. Hall
- , O. Buiu
- , O. Engstrom
- , S. B. Newcomb
- AMO GmbH
- Technische Universität Darmstadt
- University of Liverpool
- Chalmers University of Technology
- Co.
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review