The growth and characterization of cadmium selenide and cadmium zinc selenide epilayers by MOVPE

P. J. Parbrook; A. Kamata; T. Uemoto

doi:10.1016/S0022-0248(07)80015-7

The growth and characterization of cadmium selenide and cadmium zinc selenide epilayers by MOVPE

P. J. Parbrook
, A. Kamata
, T. Uemoto

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of cubic CdSe and Cd_xZn_1-xSe on (100) GaAs by MOVPE using dimethylcadmium, dimethylzinc and dimethylse- lenide is reported. It is shown that CdSe growth can be achieved at much lower temperatures than for ZnSe when (CH₃)₂Se is used as the group VI source. Single crystal alloy layers can be grown across the entire composition range from ZnSe to CdSe. However layers are zinc rich compared to the gas phase Cd:Zn ratio. The layer quality - as determined by microscopy, X-ray diffraction and photoluminescence - is good for low values of x, but deteriorates with increasing Cd composition.

Original language	English
Pages (from-to)	639-645
Number of pages	7
Journal	Journal of Crystal Growth
Volume	128
Issue number	1-4 PART 2
DOIs	https://doi.org/10.1016/S0022-0248(07)80015-7
Publication status	Published - 1 Mar 1993
Externally published	Yes

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title = "The growth and characterization of cadmium selenide and cadmium zinc selenide epilayers by MOVPE",

abstract = "The growth of cubic CdSe and CdxZn1-xSe on (100) GaAs by MOVPE using dimethylcadmium, dimethylzinc and dimethylse- lenide is reported. It is shown that CdSe growth can be achieved at much lower temperatures than for ZnSe when (CH3)2Se is used as the group VI source. Single crystal alloy layers can be grown across the entire composition range from ZnSe to CdSe. However layers are zinc rich compared to the gas phase Cd:Zn ratio. The layer quality - as determined by microscopy, X-ray diffraction and photoluminescence - is good for low values of x, but deteriorates with increasing Cd composition.",

author = "Parbrook, \{P. J.\} and A. Kamata and T. Uemoto",

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doi = "10.1016/S0022-0248(07)80015-7",

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AU - Parbrook, P. J.

AU - Kamata, A.

AU - Uemoto, T.

PY - 1993/3/1

Y1 - 1993/3/1

N2 - The growth of cubic CdSe and CdxZn1-xSe on (100) GaAs by MOVPE using dimethylcadmium, dimethylzinc and dimethylse- lenide is reported. It is shown that CdSe growth can be achieved at much lower temperatures than for ZnSe when (CH3)2Se is used as the group VI source. Single crystal alloy layers can be grown across the entire composition range from ZnSe to CdSe. However layers are zinc rich compared to the gas phase Cd:Zn ratio. The layer quality - as determined by microscopy, X-ray diffraction and photoluminescence - is good for low values of x, but deteriorates with increasing Cd composition.

AB - The growth of cubic CdSe and CdxZn1-xSe on (100) GaAs by MOVPE using dimethylcadmium, dimethylzinc and dimethylse- lenide is reported. It is shown that CdSe growth can be achieved at much lower temperatures than for ZnSe when (CH3)2Se is used as the group VI source. Single crystal alloy layers can be grown across the entire composition range from ZnSe to CdSe. However layers are zinc rich compared to the gas phase Cd:Zn ratio. The layer quality - as determined by microscopy, X-ray diffraction and photoluminescence - is good for low values of x, but deteriorates with increasing Cd composition.

UR - https://www.scopus.com/pages/publications/0027555252

U2 - 10.1016/S0022-0248(07)80015-7

DO - 10.1016/S0022-0248(07)80015-7

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AN - SCOPUS:0027555252

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VL - 128

SP - 639

EP - 645

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4 PART 2

ER -

The growth and characterization of cadmium selenide and cadmium zinc selenide epilayers by MOVPE

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