The Growth of Indium Selenide Thin Films from a Novel Asymmetric Dialkyldiselenocarbamate of Indium

Paul O'Brien; David J. Otway; John R. Walsh

doi:10.1002/cvde.19970030411

The Growth of Indium Selenide Thin Films from a Novel Asymmetric Dialkyldiselenocarbamate of Indium

Paul O'Brien
, David J. Otway
, John R. Walsh

Imperial College London

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of cubic In₂Se₃ have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se₂CNMe n-hexyl)₃. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe₂ is described. Films were grown on glass and InP(111) between 450 and 500°C, and characterized by X-ray diffraction and scanning electron microscopy.

Original language	English
Pages (from-to)	227-229
Number of pages	3
Journal	Chemical Vapor Deposition
Volume	3
Issue number	4
DOIs	https://doi.org/10.1002/cvde.19970030411
Publication status	Published - Aug 1997
Externally published	Yes

Keywords

Indium selenide
MOCVD

Access to Document

10.1002/cvde.19970030411

Cite this

@article{c57bf0a0fee342c69fb1d91c5bbd6ddb,

title = "The Growth of Indium Selenide Thin Films from a Novel Asymmetric Dialkyldiselenocarbamate of Indium",

abstract = "Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500°C, and characterized by X-ray diffraction and scanning electron microscopy.",

keywords = "Indium selenide, MOCVD",

author = "Paul O'Brien and Otway, \{David J.\} and Walsh, \{John R.\}",

year = "1997",

month = aug,

doi = "10.1002/cvde.19970030411",

language = "English",

volume = "3",

pages = "227--229",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - The Growth of Indium Selenide Thin Films from a Novel Asymmetric Dialkyldiselenocarbamate of Indium

AU - O'Brien, Paul

AU - Otway, David J.

AU - Walsh, John R.

PY - 1997/8

Y1 - 1997/8

N2 - Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500°C, and characterized by X-ray diffraction and scanning electron microscopy.

AB - Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500°C, and characterized by X-ray diffraction and scanning electron microscopy.

KW - Indium selenide

KW - MOCVD

UR - https://www.scopus.com/pages/publications/0000916757

U2 - 10.1002/cvde.19970030411

DO - 10.1002/cvde.19970030411

M3 - Article

AN - SCOPUS:0000916757

SN - 0948-1907

VL - 3

SP - 227

EP - 229

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 4

ER -

The Growth of Indium Selenide Thin Films from a Novel Asymmetric Dialkyldiselenocarbamate of Indium

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this