The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors

Ailbe O'Manachain

doi:10.1063/1.4980012

The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.4980012
Publication status	Published - 2017

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10.1063/1.4980012

Cite this

@article{06a10237cd4149af9d2478ea8d328cab,

title = "The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors",

author = "Ailbe O'Manachain",

year = "2017",

doi = "10.1063/1.4980012",

language = "Undefined/Unknown",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}