| Original language | Undefined/Unknown |
|---|---|
| Journal | Journal of Applied Physics |
| Publication status | Published - 2010 |
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The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) p-& n-type In0. 53Ga0. 47As surfaces
Research output: Contribution to journal › Article › peer-review