The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al 2 O 3 and sulphur passivated molecular beam epitaxially grown (110) p-and n-type In 0.53 Ga 0.47 As surfaces

Yen-Chun Fu; Uthayasankaran Peralagu; Jun Lin; Ian Povey; Xu Li; Olesya Ignatova; Scott Monaghan; Ravi Droopad; Paul Hurley; Iain Thayne

The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al 2 O 3 and sulphur passivated molecular beam epitaxially grown (110) p-and n-type In 0.53 Ga 0.47 As surfaces

Yen-Chun Fu
, Uthayasankaran Peralagu
, Jun Lin
, Ian Povey
, Xu Li
, Olesya Ignatova
, Scott Monaghan
, Ravi Droopad
, Paul Hurley
, Iain Thayne

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Meeting Abstracts
Publication status	Published - 2014

Cite this

@article{b5a7fa55ca4b44d29de4a593c2953820,

title = "The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al 2 O 3 and sulphur passivated molecular beam epitaxially grown (110) p-and n-type In 0.53 Ga 0.47 As surfaces",

author = "Yen-Chun Fu and Uthayasankaran Peralagu and Jun Lin and Ian Povey and Xu Li and Olesya Ignatova and Scott Monaghan and Ravi Droopad and Paul Hurley and Iain Thayne",

year = "2014",

language = "Undefined/Unknown",

journal = "Meeting Abstracts",

issn = "1091-8213",

}

TY - JOUR

T1 - The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al 2 O 3 and sulphur passivated molecular beam epitaxially grown (110) p-and n-type In 0.53 Ga 0.47 As surfaces

AU - Fu, Yen-Chun

AU - Peralagu, Uthayasankaran

AU - Lin, Jun

AU - Povey, Ian

AU - Li, Xu

AU - Ignatova, Olesya

AU - Monaghan, Scott

AU - Droopad, Ravi

AU - Hurley, Paul

AU - Thayne, Iain

PY - 2014

Y1 - 2014

M3 - Article

SN - 1091-8213

JO - Meeting Abstracts

JF - Meeting Abstracts

ER -