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The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) p-& n-type In0. 53Ga0. 47As surfaces

  • Yen-Chun Fu
  • , Uthayasankaran Peralagu
  • , Jun Lin
  • , Ian Povey
  • , Xu Li
  • , Olesya Ignarova
  • , Scott Monaghan
  • , Ravi Droopad
  • , Paul Hurley
  • , Iain Thayne

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
JournalMeeting Abstracts
Publication statusPublished - 2012

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