The impact of oxide degradation on the low frequency (1/f) noise behaviour of p channel MOSFETS

Results are presented on the impact of hot carrier degradation on the low frequency (1/f) noise behaviour of p channel MOSFETs. It is found that, in contrast to nMOSFETs, p channel devices exhibit no measurable change in the magnitude of the 1/f noise after severe device degradation at the condition of maximum gate current. The observations have been obtained on a range of device geometries and processes. The degradation results are analysed in conjunction with charge pumping characteristics to explain the insensitivity of the 1/f noise to hot carrier degradation in the case of p channel devices. The significance of these results to the performance of p channel devices in analogue applications is discussed.