The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Geert Hellings; Andriy Hikavyy; Jerome Mitard; Liesbeth Witters; Brahim Benbakhti; Alireza Alian; Niamh Waldron; Hugo Bender; Geert Eneman; Raymond Krom; Andreas Schulze; Wilfried Vandervorst; Roger Loo; Marc Heyns; Marc Meuris; Thomas Hoffmann; Kristin De Meyer

doi:10.1016/j.tsf.2011.10.105

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Geert Hellings
, Andriy Hikavyy
, Jerome Mitard
, Liesbeth Witters
, Brahim Benbakhti
, Alireza Alian
, Niamh Waldron
, Hugo Bender
, Geert Eneman
, Raymond Krom
, Andreas Schulze
, Wilfried Vandervorst
, Roger Loo
, Marc Heyns
, Marc Meuris
, Thomas Hoffmann
, Kristin De Meyer

Interuniversitair Micro-Elektronica Centrum
KU Leuven
IWT
University of Glasgow
Belgian National Fund for Scientific Research

Research output: Contribution to journal › Article › peer-review

Abstract

The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V _T-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage.

Original language	English
Pages (from-to)	3326-3331
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.105
Publication status	Published - 1 Feb 2012
Externally published	Yes

Keywords

Implant-free
Modeling
MOSFET
Quantum Well transistors
Scalability
SiliconGermanium
TCAD
VT tuning

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10.1016/j.tsf.2011.10.105

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Hellings, G., Hikavyy, A., Mitard, J., Witters, L., Benbakhti, B., Alian, A., Waldron, N., Bender, H., Eneman, G., Krom, R., Schulze, A., Vandervorst, W., Loo, R., Heyns, M., Meuris, M., Hoffmann, T., & De Meyer, K. (2012). The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures. Thin Solid Films, 520(8), 3326-3331. https://doi.org/10.1016/j.tsf.2011.10.105

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abstract = "The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V T-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage.",

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Hellings, G, Hikavyy, A, Mitard, J, Witters, L, Benbakhti, B, Alian, A, Waldron, N, Bender, H, Eneman, G, Krom, R, Schulze, A, Vandervorst, W, Loo, R, Heyns, M, Meuris, M, Hoffmann, T & De Meyer, K 2012, 'The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures', Thin Solid Films, vol. 520, no. 8, pp. 3326-3331. https://doi.org/10.1016/j.tsf.2011.10.105

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AU - Hellings, Geert

AU - Hikavyy, Andriy

AU - Mitard, Jerome

AU - Witters, Liesbeth

AU - Benbakhti, Brahim

AU - Alian, Alireza

AU - Waldron, Niamh

AU - Bender, Hugo

AU - Eneman, Geert

AU - Krom, Raymond

AU - Schulze, Andreas

AU - Vandervorst, Wilfried

AU - Loo, Roger

AU - Heyns, Marc

AU - Meuris, Marc

AU - Hoffmann, Thomas

AU - De Meyer, Kristin

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KW - Modeling

KW - MOSFET

KW - Quantum Well transistors

KW - Scalability

KW - SiliconGermanium

KW - TCAD

KW - VT tuning

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ER -

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

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Keywords

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