The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

T. Hofmann; M. Schubert; C. Von Middendorff; G. Leibiger; V. Gottschalch; C. M. Herzinger; A. Lindsay; E. O'Reilly

doi:10.1063/1.1994180

The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

T. Hofmann
, M. Schubert
, C. Von Middendorff
, G. Leibiger
, V. Gottschalch
, C. M. Herzinger
, A. Lindsay
, E. O'Reilly

Leipzig University
J.A. Woollam Company, Inc.

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	455-456
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994180
Publication status	Published - 30 Jun 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1063/1.1994180

Cite this

Hofmann, T., Schubert, M., Von Middendorff, C., Leibiger, G., Gottschalch, V., Herzinger, C. M., Lindsay, A., & O'Reilly, E. (2005). The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 455-456). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994180

@inproceedings{3d2ae5e9acf447f682e8e4e0fef4bf00,

title = "The inertial-mass scale for free-charge-carriers in semiconductor heterostructures",

abstract = "Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ({"}effective{"}) mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.",

author = "T. Hofmann and M. Schubert and \{Von Middendorff\}, C. and G. Leibiger and V. Gottschalch and Herzinger, \{C. M.\} and A. Lindsay and E. O'Reilly",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994180",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "455--456",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Hofmann, T, Schubert, M, Von Middendorff, C, Leibiger, G, Gottschalch, V, Herzinger, CM, Lindsay, A & O'Reilly, E 2005, The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 455-456, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994180

The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. / Hofmann, T.; Schubert, M.; Von Middendorff, C. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 455-456 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

AU - Hofmann, T.

AU - Schubert, M.

AU - Von Middendorff, C.

AU - Leibiger, G.

AU - Gottschalch, V.

AU - Herzinger, C. M.

AU - Lindsay, A.

AU - O'Reilly, E.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

AB - Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

UR - https://www.scopus.com/pages/publications/33749460463

U2 - 10.1063/1.1994180

DO - 10.1063/1.1994180

M3 - Conference proceeding

AN - SCOPUS:33749460463

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 455

EP - 456

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

Abstract

Publication series

Conference

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this