The influence of MBE growth conditions on optical properties of InAlGaAs/AlGaAs structures

K. Kosiel; K. Regiński; A. Szerling; T. Piwoński; M. Bugajski

The influence of MBE growth conditions on optical properties of InAlGaAs/AlGaAs structures

K. Kosiel
, K. Regiński
, A. Szerling
, T. Piwoński
, M. Bugajski

Institute of Microelectronics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Optical properties of compressively strained In_0.24Al _0.19Ga_0.57As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (T _s) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate T_s for InAlGaAs were experimentally found.

Original language	English
Journal	Electron Technology
Volume	36
Publication status	Published - 2004
Externally published	Yes

Cite this

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title = "The influence of MBE growth conditions on optical properties of InAlGaAs/AlGaAs structures",

abstract = "Optical properties of compressively strained In0.24Al 0.19Ga0.57As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (T s) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate Ts for InAlGaAs were experimentally found.",

author = "K. Kosiel and K. Regi{\'n}ski and A. Szerling and T. Piwo{\'n}ski and M. Bugajski",

year = "2004",

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journal = "Electron Technology",

issn = "0070-9816",

publisher = "Institute of Electron Technology",

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T1 - The influence of MBE growth conditions on optical properties of InAlGaAs/AlGaAs structures

AU - Kosiel, K.

AU - Regiński, K.

AU - Szerling, A.

AU - Piwoński, T.

AU - Bugajski, M.

PY - 2004

Y1 - 2004

N2 - Optical properties of compressively strained In0.24Al 0.19Ga0.57As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (T s) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate Ts for InAlGaAs were experimentally found.

AB - Optical properties of compressively strained In0.24Al 0.19Ga0.57As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (T s) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate Ts for InAlGaAs were experimentally found.

UR - https://www.scopus.com/pages/publications/23744484943

M3 - Article

AN - SCOPUS:23744484943

SN - 0070-9816

VL - 36

JO - Electron Technology

JF - Electron Technology

ER -

The influence of MBE growth conditions on optical properties of InAlGaAs/AlGaAs structures

Abstract

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