The influence of oxide charge on carrier mobility in HfO2/TiN gate silicon MOSFETs

P. K. Hurley; M. A. Negara; T. Van Hemert; K. Cherkaoui

doi:10.1149/1.3122103

The influence of oxide charge on carrier mobility in HfO₂/TiN gate silicon MOSFETs

P. K. Hurley
, M. A. Negara
, T. Van Hemert
, K. Cherkaoui

University of Twente

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8×10¹² cm^-2) in TiN/HfO₂/SiO_x/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the density of oxide charge in the HfO ₂/SiO_x gate stack. The temperature dependence of the electron mobility (50 K to 350 K) and hole mobility (218 K to 373 K) is determined before and after the various levels of oxide and interface degradation to allow an experimental determination of the Coulomb scattering term (α) as a function of temperature for various oxide charge levels. Based on the temperature dependant a determined for a 3nm HfO₂ gate thickness n channel MOSFET, an empirical model has been developed which accurately predicts the measured electron mobility for the 2.4, 2.0 and 1.6nm HfO₂ gate thicknesses.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Publisher	Electrochemical Society Inc.
Pages	379-391
Number of pages	13
Edition	2
ISBN (Electronic)	9781607680604
ISBN (Print)	9781566777100
DOIs	https://doi.org/10.1149/1.3122103
Publication status	Published - 2009
Event	International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States Duration: 24 May 2009 → 29 May 2009

Publication series

Name	ECS Transactions
Number	2
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
Country/Territory	United States
City	San Francisco, CA
Period	24/05/09 → 29/05/09

Access to Document

10.1149/1.3122103

Cite this

@inproceedings{8eebe02075df4a0186c4ad483673c169,

title = "The influence of oxide charge on carrier mobility in HfO2/TiN gate silicon MOSFETs",

abstract = "In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8×1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the density of oxide charge in the HfO 2/SiOx gate stack. The temperature dependence of the electron mobility (50 K to 350 K) and hole mobility (218 K to 373 K) is determined before and after the various levels of oxide and interface degradation to allow an experimental determination of the Coulomb scattering term (α) as a function of temperature for various oxide charge levels. Based on the temperature dependant a determined for a 3nm HfO2 gate thickness n channel MOSFET, an empirical model has been developed which accurately predicts the measured electron mobility for the 2.4, 2.0 and 1.6nm HfO2 gate thicknesses.",

author = "Hurley, \{P. K.\} and Negara, \{M. A.\} and \{Van Hemert\}, T. and K. Cherkaoui",

year = "2009",

doi = "10.1149/1.3122103",

language = "English",

isbn = "9781566777100",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "379--391",

booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",

address = "United States",

edition = "2",

note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",

}

Hurley, PK, Negara, MA, Van Hemert, T & Cherkaoui, K 2009, The influence of oxide charge on carrier mobility in HfO₂/TiN gate silicon MOSFETs. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2 edn, ECS Transactions, no. 2, vol. 19, Electrochemical Society Inc., pp. 379-391, International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society, San Francisco, CA, United States, 24/05/09. https://doi.org/10.1149/1.3122103

The influence of oxide charge on carrier mobility in HfO₂/TiN gate silicon MOSFETs. / Hurley, P. K.; Negara, M. A.; Van Hemert, T. et al.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2. ed. Electrochemical Society Inc., 2009. p. 379-391 (ECS Transactions; Vol. 19, No. 2).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - The influence of oxide charge on carrier mobility in HfO2/TiN gate silicon MOSFETs

AU - Hurley, P. K.

AU - Negara, M. A.

AU - Van Hemert, T.

AU - Cherkaoui, K.

PY - 2009

Y1 - 2009

N2 - In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8×1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the density of oxide charge in the HfO 2/SiOx gate stack. The temperature dependence of the electron mobility (50 K to 350 K) and hole mobility (218 K to 373 K) is determined before and after the various levels of oxide and interface degradation to allow an experimental determination of the Coulomb scattering term (α) as a function of temperature for various oxide charge levels. Based on the temperature dependant a determined for a 3nm HfO2 gate thickness n channel MOSFET, an empirical model has been developed which accurately predicts the measured electron mobility for the 2.4, 2.0 and 1.6nm HfO2 gate thicknesses.

AB - In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8×1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the density of oxide charge in the HfO 2/SiOx gate stack. The temperature dependence of the electron mobility (50 K to 350 K) and hole mobility (218 K to 373 K) is determined before and after the various levels of oxide and interface degradation to allow an experimental determination of the Coulomb scattering term (α) as a function of temperature for various oxide charge levels. Based on the temperature dependant a determined for a 3nm HfO2 gate thickness n channel MOSFET, an empirical model has been developed which accurately predicts the measured electron mobility for the 2.4, 2.0 and 1.6nm HfO2 gate thicknesses.

UR - https://www.scopus.com/pages/publications/76549114714

U2 - 10.1149/1.3122103

DO - 10.1149/1.3122103

M3 - Conference proceeding

AN - SCOPUS:76549114714

SN - 9781566777100

T3 - ECS Transactions

SP - 379

EP - 391

BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10

PB - Electrochemical Society Inc.

T2 - International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society

Y2 - 24 May 2009 through 29 May 2009

ER -