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The nature of the band gap of GeSn alloys

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

We present a detailed analysis of the electronic structure of GeSn alloys using density functional theory. Special attention is paid to Sn-induced conduction band mixing effects. Our calculations indicate a continuous evolution from an indirect to a direct band gap material with increasing Sn content. This finding is in stark contrast to the literature perception of a sharp transition at a fixed critical Sn composition. Finally, we discuss and present initial results on how the density functional data is used to establish semi-empirical tight-binding models.

Original languageEnglish
Title of host publication18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
EditorsJoachim Piprek, Aleksandra B. Djurisic
PublisherIEEE Computer Society
Pages39-40
Number of pages2
ISBN (Electronic)9781538655993
DOIs
Publication statusPublished - 7 Dec 2018
Event18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 - Hong Kong, China
Duration: 5 Nov 20189 Nov 2018

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2018-November
ISSN (Print)2158-3234

Conference

Conference18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
Country/TerritoryChina
CityHong Kong
Period5/11/189/11/18

Keywords

  • electronic structure
  • GeSn alloys

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