The reactive adsorption of CCl4 on GaAs(100) surfaces at 300 K

P. A. Goulding; M. E. Pemble

doi:10.1016/0039-6028(91)90182-R

The reactive adsorption of CCl₄ on GaAs(100) surfaces at 300 K

P. A. Goulding
, M. E. Pemble

University of Manchester

Research output: Contribution to journal › Article › peer-review

Abstract

Auger electron spectroscopy has been used to monitor the adsorption of CCl₄ on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 10¹⁴ and (2.0 ± 0.2) × 10¹⁴ cm ^-2 are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.

Original language	English
Pages (from-to)	L201-L203
Journal	Surface Science
Volume	247
Issue number	1
DOIs	https://doi.org/10.1016/0039-6028(91)90182-R
Publication status	Published - 1 May 1991

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title = "The reactive adsorption of CCl4 on GaAs(100) surfaces at 300 K",

abstract = "Auger electron spectroscopy has been used to monitor the adsorption of CCl4 on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 1014 and (2.0 ± 0.2) × 1014 cm -2 are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.",

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AU - Goulding, P. A.

AU - Pemble, M. E.

PY - 1991/5/1

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N2 - Auger electron spectroscopy has been used to monitor the adsorption of CCl4 on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 1014 and (2.0 ± 0.2) × 1014 cm -2 are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.

AB - Auger electron spectroscopy has been used to monitor the adsorption of CCl4 on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 1014 and (2.0 ± 0.2) × 1014 cm -2 are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.

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VL - 247

SP - L201-L203

JO - Surface Science

JF - Surface Science

IS - 1

ER -

The reactive adsorption of CCl₄ on GaAs(100) surfaces at 300 K

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