The revival of compound semiconductors and how they will change the world in a 5G/6G era

N. Collaert; A. Alian; A. Banerjee; V. Chauhan; R. Y. ElKashlan; B. Hsu; M. Ingels; A. Khaled; K. Vondkar Kodandarama; B. Kunert; Y. Mols; U. Peralagu; V. Putcha; R. Rodriguez; A. Sibaja-Hernandez; E. Simoen; A. Vais; A. Walke; L. Witters; S. Yadav; H. Yu; M. Zhao; P. Wambacq; B. Parvais; N. Waldron

doi:10.1149/09805.0015ecst

The revival of compound semiconductors and how they will change the world in a 5G/6G era

N. Collaert
, A. Alian
, A. Banerjee
, V. Chauhan
, R. Y. ElKashlan
, B. Hsu
, M. Ingels
, A. Khaled
, K. Vondkar Kodandarama
, B. Kunert
, Y. Mols
, U. Peralagu
, V. Putcha
, R. Rodriguez
, A. Sibaja-Hernandez
, E. Simoen
, A. Vais
, A. Walke
, L. Witters
, S. Yadav

H. Yu, M. Zhao, P. Wambacq, B. Parvais, N. Waldron

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

The world is more than ever relying on connectivity in our daily life as well as our professional life. With 5G being rolled out, the industry is looking already at the next generation of mobile communication to bring even higher speeds and more connections than previous generations. But with 5G we are at an inflection point where it is not only about higher data rates and more connections, but about connecting different kind of devices and the new ways humans and machines interact with each other. The higher frequencies, low latency and reliability requirements will put a lot of strain on the technologies to enable this. While CMOS is the preferred vehicle, to fulfill these demands compound semiconductors like GaN and InP might be the better options for particular functions of the radio architecture. This paper will address the progress toward upscaling these materials to a Si platform and to make them CMOS and 3D compatible to enable the final heterogeneous systems that will be needed for 5G and beyond.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
Editors	Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
Publisher	IOP Publishing Ltd.
Pages	15-25
Number of pages	11
Edition	5
ISBN (Electronic)	9781607689003
DOIs	https://doi.org/10.1149/09805.0015ecst
Publication status	Published - 2020
Externally published	Yes
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: 4 Oct 2020 → 9 Oct 2020

Publication series

Name	ECS Transactions
Number	5
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	4/10/20 → 9/10/20

Access to Document

10.1149/09805.0015ecst

Cite this

Collaert, N., Alian, A., Banerjee, A., Chauhan, V., ElKashlan, R. Y., Hsu, B., Ingels, M., Khaled, A., Vondkar Kodandarama, K., Kunert, B., Mols, Y., Peralagu, U., Putcha, V., Rodriguez, R., Sibaja-Hernandez, A., Simoen, E., Vais, A., Walke, A., Witters, L., ... Waldron, N. (2020). The revival of compound semiconductors and how they will change the world in a 5G/6G era. In Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, & A. Mai (Eds.), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9 (5 ed., pp. 15-25). Article 15 (ECS Transactions; Vol. 98, No. 5). IOP Publishing Ltd.. https://doi.org/10.1149/09805.0015ecst

Collaert, N. ; Alian, A. ; Banerjee, A. et al. / The revival of compound semiconductors and how they will change the world in a 5G/6G era. PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. editor / Q. Liu ; J. M. Hartmann ; J. R. Holt ; X. Gong ; V. Jain ; G. Niu ; G. Masini ; A. Ogura ; S. Miyazaki ; M. Ostling ; W. Bi ; A. Schulze ; A. Mai. 5. ed. IOP Publishing Ltd., 2020. pp. 15-25 (ECS Transactions; 5).

@inproceedings{f232227c693440a7ac934a5b056b7070,

title = "The revival of compound semiconductors and how they will change the world in a 5G/6G era",

abstract = "The world is more than ever relying on connectivity in our daily life as well as our professional life. With 5G being rolled out, the industry is looking already at the next generation of mobile communication to bring even higher speeds and more connections than previous generations. But with 5G we are at an inflection point where it is not only about higher data rates and more connections, but about connecting different kind of devices and the new ways humans and machines interact with each other. The higher frequencies, low latency and reliability requirements will put a lot of strain on the technologies to enable this. While CMOS is the preferred vehicle, to fulfill these demands compound semiconductors like GaN and InP might be the better options for particular functions of the radio architecture. This paper will address the progress toward upscaling these materials to a Si platform and to make them CMOS and 3D compatible to enable the final heterogeneous systems that will be needed for 5G and beyond.",

author = "N. Collaert and A. Alian and A. Banerjee and V. Chauhan and ElKashlan, \{R. Y.\} and B. Hsu and M. Ingels and A. Khaled and \{Vondkar Kodandarama\}, K. and B. Kunert and Y. Mols and U. Peralagu and V. Putcha and R. Rodriguez and A. Sibaja-Hernandez and E. Simoen and A. Vais and A. Walke and L. Witters and S. Yadav and H. Yu and M. Zhao and P. Wambacq and B. Parvais and N. Waldron",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09805.0015ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

number = "5",

pages = "15--25",

editor = "Q. Liu and Hartmann, \{J. M.\} and Holt, \{J. R.\} and X. Gong and V. Jain and G. Niu and G. Masini and A. Ogura and S. Miyazaki and M. Ostling and W. Bi and A. Schulze and A. Mai",

booktitle = "PRiME 2020",

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Collaert, N, Alian, A, Banerjee, A, Chauhan, V, ElKashlan, RY, Hsu, B, Ingels, M, Khaled, A, Vondkar Kodandarama, K, Kunert, B, Mols, Y, Peralagu, U, Putcha, V, Rodriguez, R, Sibaja-Hernandez, A, Simoen, E, Vais, A, Walke, A, Witters, L, Yadav, S, Yu, H, Zhao, M, Wambacq, P, Parvais, B & Waldron, N 2020, The revival of compound semiconductors and how they will change the world in a 5G/6G era. in Q Liu, JM Hartmann, JR Holt, X Gong, V Jain, G Niu, G Masini, A Ogura, S Miyazaki, M Ostling, W Bi, A Schulze & A Mai (eds), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. 5 edn, 15, ECS Transactions, no. 5, vol. 98, IOP Publishing Ltd., pp. 15-25, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 4/10/20. https://doi.org/10.1149/09805.0015ecst

The revival of compound semiconductors and how they will change the world in a 5G/6G era. / Collaert, N.; Alian, A.; Banerjee, A. et al.
PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. ed. / Q. Liu; J. M. Hartmann; J. R. Holt; X. Gong; V. Jain; G. Niu; G. Masini; A. Ogura; S. Miyazaki; M. Ostling; W. Bi; A. Schulze; A. Mai. 5. ed. IOP Publishing Ltd., 2020. p. 15-25 15 (ECS Transactions; Vol. 98, No. 5).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Chauhan, V.

AU - ElKashlan, R. Y.

AU - Hsu, B.

AU - Ingels, M.

AU - Khaled, A.

AU - Vondkar Kodandarama, K.

AU - Kunert, B.

AU - Mols, Y.

AU - Peralagu, U.

AU - Putcha, V.

AU - Rodriguez, R.

AU - Sibaja-Hernandez, A.

AU - Simoen, E.

AU - Vais, A.

AU - Walke, A.

AU - Witters, L.

AU - Yadav, S.

AU - Yu, H.

AU - Zhao, M.

AU - Wambacq, P.

AU - Parvais, B.

AU - Waldron, N.

N1 - Publisher Copyright: © The Electrochemical Society

PY - 2020

Y1 - 2020

N2 - The world is more than ever relying on connectivity in our daily life as well as our professional life. With 5G being rolled out, the industry is looking already at the next generation of mobile communication to bring even higher speeds and more connections than previous generations. But with 5G we are at an inflection point where it is not only about higher data rates and more connections, but about connecting different kind of devices and the new ways humans and machines interact with each other. The higher frequencies, low latency and reliability requirements will put a lot of strain on the technologies to enable this. While CMOS is the preferred vehicle, to fulfill these demands compound semiconductors like GaN and InP might be the better options for particular functions of the radio architecture. This paper will address the progress toward upscaling these materials to a Si platform and to make them CMOS and 3D compatible to enable the final heterogeneous systems that will be needed for 5G and beyond.

AB - The world is more than ever relying on connectivity in our daily life as well as our professional life. With 5G being rolled out, the industry is looking already at the next generation of mobile communication to bring even higher speeds and more connections than previous generations. But with 5G we are at an inflection point where it is not only about higher data rates and more connections, but about connecting different kind of devices and the new ways humans and machines interact with each other. The higher frequencies, low latency and reliability requirements will put a lot of strain on the technologies to enable this. While CMOS is the preferred vehicle, to fulfill these demands compound semiconductors like GaN and InP might be the better options for particular functions of the radio architecture. This paper will address the progress toward upscaling these materials to a Si platform and to make them CMOS and 3D compatible to enable the final heterogeneous systems that will be needed for 5G and beyond.

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Collaert N, Alian A, Banerjee A, Chauhan V, ElKashlan RY, Hsu B et al. The revival of compound semiconductors and how they will change the world in a 5G/6G era. In Liu Q, Hartmann JM, Holt JR, Gong X, Jain V, Niu G, Masini G, Ogura A, Miyazaki S, Ostling M, Bi W, Schulze A, Mai A, editors, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. 5 ed. IOP Publishing Ltd. 2020. p. 15-25. 15. (ECS Transactions; 5). doi: 10.1149/09805.0015ecst

The revival of compound semiconductors and how they will change the world in a 5G/6G era

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