Abstract
We have measured the pulsed light-current characteristics of a series of InGaN/GaN quantum well light-emitting diodes which were annealed post-growth at different temperatures as a function of their operating temperature. The light output at a fixed current density increases with the temperature of measurement, reaches a maximum and then decreases for all the diodes. The measurement temperature at which the maximum light output occurs and the magnitude of the light output depend on the post-growth thermal anneal temperature. The thermal anneal temperature is thought to affect the acceptor concentration in the p-doped cap layer, which also changes the carrier mobility. A simulation, incorporating carrier leakage, is used to reproduce the experimental behavior where the acceptor concentration is changed to represent the effects of the different anneal temperatures.
| Original language | English |
|---|---|
| Article number | 49 |
| Pages (from-to) | 425-430 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5722 |
| DOIs | |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronics Devices XIII - San Jose, CA, United States Duration: 24 Jan 2005 → 27 Jan 2005 |
