The role of vacancies in the red luminescence from Mg-doped GaN

S. Zeng; G. N. Aliev; D. Wolverson; J. J. Davies; S. J. Bingham; D. A. Abdulmalik; P. G. Coleman; T. Wang; P. J. Parbrook

doi:10.1002/pssc.200565331

The role of vacancies in the red luminescence from Mg-doped GaN

S. Zeng
, G. N. Aliev
, D. Wolverson
, J. J. Davies
, S. J. Bingham
, D. A. Abdulmalik
, P. G. Coleman
, T. Wang
, P. J. Parbrook

Research output: Contribution to journal › Article › peer-review

Abstract

The red (1.8 eV) photoluminescence (PL) band often observed in Mg-doped GaN has been suggested to be due to a recombination process involving vacancy-related deep defects. To identify the defects concerned, optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been combined. A correlation between the PL spectra, the ODMR signals and the PAS data has been observed in as-grown layers as the magnesium doping level is increased. The experiments provide strong evidence that the origin of the red PL is recombination of electrons from both shallow and deep donors with holes at deep acceptors, the deep donors being complexes formed from nitrogen vacancies associated with substitutional magnesium ions and the deep acceptors being gallium vacancies or related centers.

Original language	English
Pages (from-to)	1919-1922
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565331
Publication status	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 28 Aug 2005 → 2 Sep 2005

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10.1002/pssc.200565331

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title = "The role of vacancies in the red luminescence from Mg-doped GaN",

abstract = "The red (1.8 eV) photoluminescence (PL) band often observed in Mg-doped GaN has been suggested to be due to a recombination process involving vacancy-related deep defects. To identify the defects concerned, optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been combined. A correlation between the PL spectra, the ODMR signals and the PAS data has been observed in as-grown layers as the magnesium doping level is increased. The experiments provide strong evidence that the origin of the red PL is recombination of electrons from both shallow and deep donors with holes at deep acceptors, the deep donors being complexes formed from nitrogen vacancies associated with substitutional magnesium ions and the deep acceptors being gallium vacancies or related centers.",

author = "S. Zeng and Aliev, \{G. N.\} and D. Wolverson and Davies, \{J. J.\} and Bingham, \{S. J.\} and Abdulmalik, \{D. A.\} and Coleman, \{P. G.\} and T. Wang and Parbrook, \{P. J.\}",

year = "2006",

doi = "10.1002/pssc.200565331",

language = "English",

volume = "3",

pages = "1919--1922",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - The role of vacancies in the red luminescence from Mg-doped GaN

AU - Zeng, S.

AU - Aliev, G. N.

AU - Wolverson, D.

AU - Davies, J. J.

AU - Bingham, S. J.

AU - Abdulmalik, D. A.

AU - Coleman, P. G.

AU - Wang, T.

AU - Parbrook, P. J.

PY - 2006

Y1 - 2006

N2 - The red (1.8 eV) photoluminescence (PL) band often observed in Mg-doped GaN has been suggested to be due to a recombination process involving vacancy-related deep defects. To identify the defects concerned, optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been combined. A correlation between the PL spectra, the ODMR signals and the PAS data has been observed in as-grown layers as the magnesium doping level is increased. The experiments provide strong evidence that the origin of the red PL is recombination of electrons from both shallow and deep donors with holes at deep acceptors, the deep donors being complexes formed from nitrogen vacancies associated with substitutional magnesium ions and the deep acceptors being gallium vacancies or related centers.

AB - The red (1.8 eV) photoluminescence (PL) band often observed in Mg-doped GaN has been suggested to be due to a recombination process involving vacancy-related deep defects. To identify the defects concerned, optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been combined. A correlation between the PL spectra, the ODMR signals and the PAS data has been observed in as-grown layers as the magnesium doping level is increased. The experiments provide strong evidence that the origin of the red PL is recombination of electrons from both shallow and deep donors with holes at deep acceptors, the deep donors being complexes formed from nitrogen vacancies associated with substitutional magnesium ions and the deep acceptors being gallium vacancies or related centers.

UR - https://www.scopus.com/pages/publications/33746324813

U2 - 10.1002/pssc.200565331

DO - 10.1002/pssc.200565331

M3 - Article

AN - SCOPUS:33746324813

SN - 1862-6351

VL - 3

SP - 1919

EP - 1922

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

The role of vacancies in the red luminescence from Mg-doped GaN

Abstract

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