@inproceedings{faafb4e6f0484b3c9579f415d0975f53,
title = "Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters",
abstract = "We present a theoretical study on the impact of alloy disorder on carrier transport and recombination rates in an (Al,Ga)N single quantum well based LED operating in the deep UV spectral range. Our calculations indicate that alloy fluctuations enable 'percolative pathways' which can result in improved carrier injection into the well, but may also increase carrier leakage from the well. Additionally, we find that alloy disorder induces carrier localization effects, a feature particularly noticeable for the holes. These localization effects can lead to locally increased carrier densities when compared to a virtual crystal approximation which neglects alloy disorder. We observe that both radiative and non-radiative recombination rates are increased. Our calculations also indicate that Auger-Meitner recombination increases faster than the radiative rate, based on a comparison with a virtual crystal approximation.",
author = "Robert Finn and Michael O'Donovan and Patricio Farrell and Timo Streckenbach and Julien Moatti and Thomas Koprucki and Stefan Schulz",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 ; Conference date: 18-09-2023 Through 21-09-2023",
year = "2023",
doi = "10.1109/NUSOD59562.2023.10273485",
language = "English",
series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",
publisher = "IEEE Computer Society",
pages = "83--84",
editor = "Paolo Bardella and Alberto Tibaldi",
booktitle = "23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023",
address = "United States",
}