TY - GEN
T1 - Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers
AU - Broderick, Christopher A.
AU - Bogusevschi, Silviu
AU - O'Reilly, Eoin P.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/8/17
Y1 - 2016/8/17
N2 - The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.
AB - The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.
UR - https://www.scopus.com/pages/publications/84987653177
U2 - 10.1109/NUSOD.2016.7546993
DO - 10.1109/NUSOD.2016.7546993
M3 - Conference proceeding
AN - SCOPUS:84987653177
T3 - 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
SP - 19
EP - 20
BT - 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
A2 - de Sterke, Martijn
A2 - Poulton, Christopher
A2 - Piprek, Joachim
A2 - Steel, Michael
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
Y2 - 11 July 2016 through 15 July 2016
ER -