@inbook{943afc0dc8b24ba7a2a07ae3bb7c9da9,
title = "Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers",
abstract = "The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.",
author = "Broderick, \{Christopher A.\} and Silviu Bogusevschi and O'Reilly, \{Eoin P.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 ; Conference date: 11-07-2016 Through 15-07-2016",
year = "2016",
month = aug,
day = "17",
doi = "10.1109/NUSOD.2016.7546993",
language = "English",
series = "16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "19--20",
editor = "\{de Sterke\}, Martijn and Christopher Poulton and Joachim Piprek and Michael Steel",
booktitle = "16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016",
address = "United States",
}