@inproceedings{d014c87794f647558dcbaa0245a02cfd,
title = "Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models",
abstract = "The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBixAs1-x alloys results in a large reduction of the band gap energy (Eg) accompanied by a significant increase of the spin-orbit-splitting energy (ΔSO), leading to an Eg < ΔSO regime for x ∼ 10\% which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBixNyAs1-x-y offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp3s* tight binding and 14-band k·p models for the study of the electronic structure of GaBi xAs1-x and GaBixNyAs1-x-y alloys. Our results are in good agreement with the available experimental data.",
keywords = "Band-Anticrossing, Bismuth, Electronic Structure, Extreme Semiconductor Alloys, Nitrogen, Tight Binding",
author = "Muhammad Usman and Broderick, \{Christopher A.\} and O'Reilly, \{Eoin P.\}",
year = "2013",
doi = "10.1063/1.4848265",
language = "English",
isbn = "9780735411944",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
pages = "21--22",
booktitle = "Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012",
note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",
}